Light and annealing induced changes in Si-H bonds in undoped a-Si : H
文献类型：期刊论文
| 作者 | Sheng, SR ; Kong, GL ; Liao, XB |
| 刊名 | SOLID STATE COMMUNICATIONS
 |
| 出版日期 | 2000 |
| 卷号 | 116期号:9页码:519 |
| 关键词 | HYDROGENATED AMORPHOUS-SILICON MODEL METASTABILITY SOAKING |
| ISSN号 | 0038-1098 |
| 通讯作者 | Sheng, SR: Univ Calif Los Angeles, Dept Phys & Astron, 405 Hilgard Ave, Los Angeles, CA 90095 USA. |
| 中文摘要 | Light and annealing induced changes in Si-H bonds in undoped a-Si:H have been investigated by a differential infrared spectroscopy method. The light-induced changes in Si-H bonds are not monotonic, quite different from the usual Staebler-Wronski effect in electronic properties, and involve more complicated physics. The magnitude of the light-induced changes in Si-H bonds is proportional to the hydrogen content in the film. There may exist more than one microscopic process which determine the light-induced changes in Si-H bonds. Almost the whole a-Si:H network is affected when a-Si:H is subjected to Light-soaking or to annealing. The light-induced changes in Si-H bonds may be an independent light-induced phenomenon or an auxiliary process of the metastable SWE defect creation. (C) 2000 Elsevier Science Ltd. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40822]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Sheng, SR,Kong, GL,Liao, XB. Light and annealing induced changes in Si-H bonds in undoped a-Si : H[J]. SOLID STATE COMMUNICATIONS,2000,116(9):519. |
| APA | Sheng, SR,Kong, GL,&Liao, XB.(2000).Light and annealing induced changes in Si-H bonds in undoped a-Si : H.SOLID STATE COMMUNICATIONS,116(9),519. |
| MLA | Sheng, SR,et al."Light and annealing induced changes in Si-H bonds in undoped a-Si : H".SOLID STATE COMMUNICATIONS 116.9(2000):519. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。