中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films

文献类型:期刊论文

作者Shang, DS ; Shi, L ; Sun, JR ; Shen, BG
刊名NANOTECHNOLOGY
出版日期2011
卷号22期号:25
关键词TRANSITION-METAL OXIDES THIN-FILMS MEMORY WO3 OXIDATION BIPOLAR SRTIO3
ISSN号0957-4484
通讯作者Shang, DS: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要Resistance switching behavior has been investigated in as-prepared and oxygen-annealed polycrystalline tungsten oxide films using conductive atomic force microscopy. The oxygen-annealed film appeared more insulative than the as-prepared films. The local current distributions demonstrated the lower conductivity at the grain boundaries than at the grains in the oxygen-annealed films. Reversible resistance switching behavior only occurred at the grain surface region of the oxygen-annealed films and the resistance switching process was described by the local valence change of tungsten ions induced by electrochemical migration of protons or oxygen vacancies. This different resistance switching behavior between the grain and grain boundary surface was attributed to the different oxygen vacancy density caused by the post-annealing process. The present results would be especially meaningful for the fabrication of nanoscale resistive nonvolatile memory devices.
收录类别SCI
资助信息National Basic Research of China; National Natural Science Foundation of China; Chinese Academy of Science; Beijing Municipal Nature Science Foundation
语种英语
公开日期2013-09-18
源URL[http://ir.iphy.ac.cn/handle/311004/40940]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Shang, DS,Shi, L,Sun, JR,et al. Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films[J]. NANOTECHNOLOGY,2011,22(25).
APA Shang, DS,Shi, L,Sun, JR,&Shen, BG.(2011).Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films.NANOTECHNOLOGY,22(25).
MLA Shang, DS,et al."Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films".NANOTECHNOLOGY 22.25(2011).

入库方式: OAI收割

来源:物理研究所

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