Locally probing the screening potential at a metal-semiconductor interface
文献类型：期刊论文
| 作者 | Jiang, Y ; Guo, JD ; Ebert, P ; Wang, EG ; Wu, KH |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2010 |
| 卷号 | 81期号:3 |
| 关键词 | ELECTRONS SURFACE SI(111) STATES |
| ISSN号 | 1098-0121 |
| 通讯作者 | Jiang, Y: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The screened Coulomb potential of a point charge located at buried Ag/Si interface was quantitatively investigated using scanning tunneling microscopy and spectroscopy at 77 K, through Ag(111)-1 x 1 films epitaxially grown on a Si(111)-root 3 x root 3-Ga substrate. On top of the Ag films, we succeeded to image the two-dimensional screening potential around the individual charged Si dopants located at the Ag/Si interface. The interface screening length was derived experimentally, which agrees well with a semimicroscopic theoretical model. |
| 收录类别 | SCI |
| 资助信息 | National Science Foundation [10874210]; MOST of China [2007CB936800] |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40966]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Jiang, Y,Guo, JD,Ebert, P,et al. Locally probing the screening potential at a metal-semiconductor interface[J]. PHYSICAL REVIEW B,2010,81(3). |
| APA | Jiang, Y,Guo, JD,Ebert, P,Wang, EG,&Wu, KH.(2010).Locally probing the screening potential at a metal-semiconductor interface.PHYSICAL REVIEW B,81(3). |
| MLA | Jiang, Y,et al."Locally probing the screening potential at a metal-semiconductor interface".PHYSICAL REVIEW B 81.3(2010). |
入库方式： OAI收割
来源：物理研究所
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