Low energy electron-beam-induced recrystallization of continuous GaAs amorphous foils
文献类型：期刊论文
| 作者 | Yang, XX ; Wang, RH ; Yan, HP ; Zhang, Z |
| 刊名 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
 |
| 出版日期 | 1997 |
| 卷号 | 49期号:1页码:5 |
| 关键词 | INDUCED EPITAXIAL CRYSTALLIZATION SOLID-PHASE EPITAXY ROOM-TEMPERATURE ION IRRADIATION SILICON REGROWTH SI SEMICONDUCTORS AMORPHIZATION MICROSCOPE |
| ISSN号 | 0921-5107 |
| 中文摘要 | The novel ternary rare-earth iron-rich interstitial compounds R-3(Fe,Cr)(29)X-y (R=Nd, Sm and X=N, C) with the monoclinic Nd-3(Fe,Ti)(29) structure have been successfully synthesized. Introduction of the interstitial nitrogen and carbon atoms led to a relative volume expansion Delta V/V of about 6% and an enhancement of Curie temperatures T-c about 268 K for the nitride and about 139 K for the carbide, respectively. The Nd3Fe24.5Cr4.5Xy compounds have a planar anisotropy at room temperature. A first-order magnetization process (FOMP) with critical field B-cr=4.4 T and 3.1 T at room temperature were observed for the Nd-nitride and carbide compounds, respectively. The Sm3Fe24Cr5Xy compounds were found to have a large uniaxial anisotropy of about 18 T at 4.2 K and about 11 T at 293 K. A FOMP with B-cr=2.3 T was also observed in the Sm-nitride compounds at 4.2 K. Magnets with coercivity of mu(oj)H(c) similar to 0.8 T at 293 K has been successfully developed from the Sm3Fe24Cr5Xy (X=N and C) phases. (C) 1997 Elsevier Science S.A. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40990]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yang, XX,Wang, RH,Yan, HP,et al. Low energy electron-beam-induced recrystallization of continuous GaAs amorphous foils[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,1997,49(1):5. |
| APA | Yang, XX,Wang, RH,Yan, HP,&Zhang, Z.(1997).Low energy electron-beam-induced recrystallization of continuous GaAs amorphous foils.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,49(1),5. |
| MLA | Yang, XX,et al."Low energy electron-beam-induced recrystallization of continuous GaAs amorphous foils".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 49.1(1997):5. |
入库方式： OAI收割
来源：物理研究所
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