Low temperature growth of epitaxial pentacene films on the Si(111)-(root 3 x root 3)R30 degrees-Ag surface
文献类型：期刊论文
| 作者 | Teng, J ; Wu, KH ; Guo, JD ; Wang, EG |
| 刊名 | SURFACE SCIENCE
 |
| 出版日期 | 2008 |
| 卷号 | 602期号:22页码:3510 |
| 关键词 | AG/SI(111) |
| ISSN号 | 0039-6028 |
| 通讯作者 | Wu, KH: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Pentacene thin films were grown on the Si(111)-(root 3 x root 3)R30 degrees -Ag surface at low substrate temperature (120 K). The growth process was investigated by scanning tunneling microscopy and low energy electron diffraction. In contrast to the growth at room temperature when 3D pentacene agglomerates form on an initial self-assembled pentacene monolayer surface, we observed an epitaxial pentacene film growth at low temperature. The pentacene molecules adopt a planar, pi-stacked geometry, aligned head-to-head to form one-dimensional structures within each layer. The structural evolution as a function of film thickness was analyzed in detail and the mechanism of low temperature growth was discussed. (C) 2008 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 资助信息 | National Science Foundation [10574146]; MOS of China [2007CB936800] |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/41005]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Teng, J,Wu, KH,Guo, JD,et al. Low temperature growth of epitaxial pentacene films on the Si(111)-(root 3 x root 3)R30 degrees-Ag surface[J]. SURFACE SCIENCE,2008,602(22):3510. |
| APA | Teng, J,Wu, KH,Guo, JD,&Wang, EG.(2008).Low temperature growth of epitaxial pentacene films on the Si(111)-(root 3 x root 3)R30 degrees-Ag surface.SURFACE SCIENCE,602(22),3510. |
| MLA | Teng, J,et al."Low temperature growth of epitaxial pentacene films on the Si(111)-(root 3 x root 3)R30 degrees-Ag surface".SURFACE SCIENCE 602.22(2008):3510. |
入库方式： OAI收割
来源：物理研究所
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