Low temperature step-graded InAlAs/GaAs metamorphic buner layers grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Shang, XZ ; Wu, SD ; Liu, C ; Wang, WX ; Guo, LW ; Huang, Q ; Zhou, JM |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2006 |
| 卷号 | 39期号:9页码:1800 |
| 关键词 | X-RAY-DIFFRACTION BUFFER LAYERS STRAIN RELAXATION SURFACE-MORPHOLOGY GAAS SUBSTRATE INVERSE STEPS HETEROSTRUCTURES MODULATION TRANSISTORS |
| ISSN号 | 0022-3727 |
| 通讯作者 | Shang, XZ: Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China. |
| 中文摘要 | Low-temperature step-graded InA1As metamorphic buffer layers on GaAs substrate grown by molecular beam epitaxy were investigated. The strain relaxation and the composition of the top InA1As layer were determined by high-resolution triple-axis x-ray diffraction measurements, which show that the top InA1As layer is nearly fully relaxed. Surface morphology was observed by reflection high-energy electron diffraction pattern and atomic force microscopy. Under a selected range of growth parameters, the root mean square surface roughness of the sample grown at 380 degrees C is 0.802 nm, which has the smallest value compared with those of other samples. Furthmore, The omega-2 theta and omega scans of the triple-axis x-ray diffraction,and photoluminescence show the sample grown at 380 degrees C has better crystalline quality. With decreasing As overpressure at this growth temperature, crystalline quality became poor and could not maintain two dimensional growth with increasing overpressure. The carrier concentrations and Hall mobilities of the InA1As/InGaAs/GaAs MM-HEMT structure on low-temperature step-graded InA1As metamorphic buffer layers grown in optimized conditions are high enough to make devices. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/41017]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Shang, XZ,Wu, SD,Liu, C,et al. Low temperature step-graded InAlAs/GaAs metamorphic buner layers grown by molecular beam epitaxy[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2006,39(9):1800. |
| APA | Shang, XZ.,Wu, SD.,Liu, C.,Wang, WX.,Guo, LW.,...&Zhou, JM.(2006).Low temperature step-graded InAlAs/GaAs metamorphic buner layers grown by molecular beam epitaxy.JOURNAL OF PHYSICS D-APPLIED PHYSICS,39(9),1800. |
| MLA | Shang, XZ,et al."Low temperature step-graded InAlAs/GaAs metamorphic buner layers grown by molecular beam epitaxy".JOURNAL OF PHYSICS D-APPLIED PHYSICS 39.9(2006):1800. |
入库方式： OAI收割
来源：物理研究所
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