Low-energy electron-beam lithography of hydrogen silsesquioxane
文献类型：期刊论文
| 作者 | Yang, HF ; Jin, AZ ; Luo, Q ; Gu, CZ ; Cui, Z ; Chen, YF |
| 刊名 | MICROELECTRONIC ENGINEERING
 |
| 出版日期 | 2006 |
| 卷号 | 83期号:4-9页码:788 |
| 关键词 | RESIST |
| ISSN号 | 0167-9317 |
| 通讯作者 | Cui, Z: Rutherford Appleton Lab, Didcot OX11 0QX, Oxon, England. |
| 中文摘要 | Low-energy electron-beam lithography using hydrogen silsesquioxane (HSQ) as a negative electron resist has been investigated in the energy range between 2 and 20 keV. It is found that the required electron dose is drastically reduced at low electron energies and the density of the pattern strongly depends on the concentration of the developer and exposure energy at low keV region. With the tetramethyl ammonium hydroxide (TMAH) developer at concentration of 2.5%, we achieved 12 nm lines of 50 nm period grating with 50 nm thickness of HSQ at 10 keV. (c) 2006 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/41026]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yang, HF,Jin, AZ,Luo, Q,et al. Low-energy electron-beam lithography of hydrogen silsesquioxane[J]. MICROELECTRONIC ENGINEERING,2006,83(4-9):788. |
| APA | Yang, HF,Jin, AZ,Luo, Q,Gu, CZ,Cui, Z,&Chen, YF.(2006).Low-energy electron-beam lithography of hydrogen silsesquioxane.MICROELECTRONIC ENGINEERING,83(4-9),788. |
| MLA | Yang, HF,et al."Low-energy electron-beam lithography of hydrogen silsesquioxane".MICROELECTRONIC ENGINEERING 83.4-9(2006):788. |
入库方式： OAI收割
来源：物理研究所
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