中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Low-temperature Hall effect in electron-doped superconducting La(2-x)Ce(x)CuO(4) thin films

文献类型:期刊论文

作者Jin, K ; Zhu, BY ; Wu, BX ; Gao, LJ ; Zhao, BR
刊名PHYSICAL REVIEW B
出版日期2008
卷号78期号:17
关键词FERMI-SURFACE NORMAL-STATE TRANSPORT CROSSOVER
ISSN号1098-0121
通讯作者Jin, K: Chinese Acad Sci, Natl Lab Superconduct, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China.
中文摘要We investigate the low-temperature Hall effect in electron-doped La(2-x)Ce(x)CuO(4) thin films from heavily underdoped x=0.06 to heavily overdoped x=0.17. With increasing x, the charge carriers that dominate the Hall effect gradually change from electronlike to holelike. From the Hall coefficient and differential Hall coefficient, we infer that a large holelike Fermi surface forms above x=0.15, that is, the electronlike pocket may exist until x=0.15. Meanwhile, the sign of the Hall resistivity changes from negative (x=0.105) to positive (x=0.12) at 2 K, indicating that single electron pocket exists below x=0.105 at low temperature.
收录类别SCI
资助信息MOST; National Natural Science Foundation of China
语种英语
公开日期2013-09-18
源URL[http://ir.iphy.ac.cn/handle/311004/41052]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Jin, K,Zhu, BY,Wu, BX,et al. Low-temperature Hall effect in electron-doped superconducting La(2-x)Ce(x)CuO(4) thin films[J]. PHYSICAL REVIEW B,2008,78(17).
APA Jin, K,Zhu, BY,Wu, BX,Gao, LJ,&Zhao, BR.(2008).Low-temperature Hall effect in electron-doped superconducting La(2-x)Ce(x)CuO(4) thin films.PHYSICAL REVIEW B,78(17).
MLA Jin, K,et al."Low-temperature Hall effect in electron-doped superconducting La(2-x)Ce(x)CuO(4) thin films".PHYSICAL REVIEW B 78.17(2008).

入库方式: OAI收割

来源:物理研究所

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