Low-temperature interface engineering for high-quality ZnO epitaxy on Si(111) substrate
文献类型：期刊论文
| 作者 | Wang, XN ; Wang, Y ; Mei, ZX ; Dong, J ; Zeng, ZQ ; Yuan, HT ; Zhang, TC ; Du, XL ; Jia, JF ; Xue, QK ; Zhang, XN ; Zhang, Z ; Li, ZF ; Lu, W |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2007 |
| 卷号 | 90期号:15 |
| ISSN号 | 0003-6951 |
| 中文摘要 | ZnO(0001)/Si(111) interface is engineered by using a three-step technique, involving low-temperature Mg deposition, oxidation, and MgO homoepitaxy. The double heterostructure of MgO(111)/Mg(0001)/Si(111) formed at -10 degrees C prevents the Si surface from oxidation and serves as an excellent template for single-domain ZnO epitaxy, which is confirmed with in situ reflection high-energy electron diffraction observation and ex situ characterization by transmission electron microscopy, x-ray diffraction, and photoluminescence. The low-temperature interface engineering method can also be applied to control other reactive metal/Si interfaces and obtain high-quality oxide templates accordingly. (c) 2007 American Institute of Physics. |
| 收录类别 | SCI |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/41053]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, XN,Wang, Y,Mei, ZX,et al. Low-temperature interface engineering for high-quality ZnO epitaxy on Si(111) substrate[J]. APPLIED PHYSICS LETTERS,2007,90(15). |
| APA | Wang, XN.,Wang, Y.,Mei, ZX.,Dong, J.,Zeng, ZQ.,...&Lu, W.(2007).Low-temperature interface engineering for high-quality ZnO epitaxy on Si(111) substrate.APPLIED PHYSICS LETTERS,90(15). |
| MLA | Wang, XN,et al."Low-temperature interface engineering for high-quality ZnO epitaxy on Si(111) substrate".APPLIED PHYSICS LETTERS 90.15(2007). |
入库方式： OAI收割
来源：物理研究所
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