Low-temperature transport properties of individual SnO2 nanowires
文献类型:期刊论文
作者 | Ma, YJ ; Zhou, F ; Lu, L ; Zhang, Z |
刊名 | SOLID STATE COMMUNICATIONS
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出版日期 | 2004 |
卷号 | 130期号:5页码:313 |
关键词 | OPTICAL-PROPERTIES RAMAN-SCATTERING COULOMB GAP TIN OXIDE NANOBELTS FILMS MORPHOLOGIES SENSORS |
ISSN号 | 0038-1098 |
通讯作者 | Ma, YJ: Chinese Acad Sci, Inst Phys, Beijing Lab Electron Microscopy, POB 603, Beijing 100080, Peoples R China. |
中文摘要 | Stannic oxide (SOn(2)) nanowires have been prepared by Chemical vapor deposition (CVD). The low-temperature transport properties of a single SnO2 nanowire have been studied. It is found that the transport of the electrons in the nanowires is dominated by the Efros-Shklovskii variable-range hopping (ES-VRH) process due to the enhanced Coulomb interaction in this semiconducting nanowire. The temperature dependence of the resistance follows the relation InR similar to T-1/2. On the I-V and dI/dV curves of the nanowire a Coulomb gap-like structure at low temperatures appears. (C) 2004 Elsevier Ltd. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-18 |
源URL | [http://ir.iphy.ac.cn/handle/311004/41082] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Ma, YJ,Zhou, F,Lu, L,et al. Low-temperature transport properties of individual SnO2 nanowires[J]. SOLID STATE COMMUNICATIONS,2004,130(5):313. |
APA | Ma, YJ,Zhou, F,Lu, L,&Zhang, Z.(2004).Low-temperature transport properties of individual SnO2 nanowires.SOLID STATE COMMUNICATIONS,130(5),313. |
MLA | Ma, YJ,et al."Low-temperature transport properties of individual SnO2 nanowires".SOLID STATE COMMUNICATIONS 130.5(2004):313. |
入库方式: OAI收割
来源:物理研究所
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