Luminescence study of band gap conversion in the SiGe material
文献类型：期刊论文
| 作者 | Chen, H ; Xie, XG ; Cheng, WQ ; Huang, Q ; Zhou, JM |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 1997 |
| 卷号 | 71期号:11页码:1555 |
| 关键词 | STRAINED-LAYER SUPERLATTICES PHOTOLUMINESCENCE GROWTH GE TRANSITION SI(100) DOTS |
| ISSN号 | 0003-6951 |
| 通讯作者 | Chen, H: CHINESE ACAD SCI,INST PHYS,POB 603,BEIJING 100080,PEOPLES R CHINA. |
| 中文摘要 | We report a photoluminescence study of SiGe quantum dots formed by one, two, and five periods of Si[8 monolayer (ML)]/Ge(4 ML) superlattices. The peak of photoluminescence from one Ge layer is at 0.95 eV, but the one from two and five periods of superlattices jump to about 1.2 eV. (C) 1997 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/41093]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, H,Xie, XG,Cheng, WQ,et al. Luminescence study of band gap conversion in the SiGe material[J]. APPLIED PHYSICS LETTERS,1997,71(11):1555. |
| APA | Chen, H,Xie, XG,Cheng, WQ,Huang, Q,&Zhou, JM.(1997).Luminescence study of band gap conversion in the SiGe material.APPLIED PHYSICS LETTERS,71(11),1555. |
| MLA | Chen, H,et al."Luminescence study of band gap conversion in the SiGe material".APPLIED PHYSICS LETTERS 71.11(1997):1555. |
入库方式： OAI收割
来源：物理研究所
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