Luminescent characteristics of near ultraviolet InGaN/GaN MQWs grown on grooved sapphire substrates fabricated by wet chemical etching
文献类型：期刊论文
| 作者 | Yu, NS ; Guo, LW ; Chen, H ; Xing, ZG ; Wang, J ; Zhu, XL ; Peng, MZ ; Yan, JF ; Jia, HQ ; Zhou, JM |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2006 |
| 卷号 | 23期号:8页码:2243 |
| 关键词 | EPITAXIAL LATERAL OVERGROWTH MOLECULAR-BEAM EPITAXY GAN FILMS VAPOR-DEPOSITION PHOTOLUMINESCENCE DEFECTS SI(111) SINGLE LAYERS |
| ISSN号 | 0256-307X |
| 通讯作者 | Yu, NS: Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | In/GaN/GaN multiple quantum wells (MQWs) are grown on planar and maskless periodically grooved sapphires by metal organic vapour phase epitaxy (MOCVD). High-resolution x-ray curves and transmission electron microscopy (TEM) are adopted to characterize the film quality. Compared with the MQWs grown on planar sapphire, the sample grown on grooved sapphire shows better crystaline quality: a remarkable reduction of dislocation densities is achieved. Meanwhile, the MQWs grown on grooved sapphire show two times larger PL intensity at room temperature. Temperature-dependant PL measurements are adopted to investigate the luminescence thermal quenching based on a fit to the Arrhenius plot of the normalized integrated PL intensity over the measured temperature range suggests that the nonradiative recombination centres (NRCs) are greatly reduced for the sample grown on grooved sapphire. We assume that the reduction of dislocations which act as NRCs is the main reason for the sample grown on pattern sapphire having higher PL intensity. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/41094]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yu, NS,Guo, LW,Chen, H,et al. Luminescent characteristics of near ultraviolet InGaN/GaN MQWs grown on grooved sapphire substrates fabricated by wet chemical etching[J]. CHINESE PHYSICS LETTERS,2006,23(8):2243. |
| APA | Yu, NS.,Guo, LW.,Chen, H.,Xing, ZG.,Wang, J.,...&Zhou, JM.(2006).Luminescent characteristics of near ultraviolet InGaN/GaN MQWs grown on grooved sapphire substrates fabricated by wet chemical etching.CHINESE PHYSICS LETTERS,23(8),2243. |
| MLA | Yu, NS,et al."Luminescent characteristics of near ultraviolet InGaN/GaN MQWs grown on grooved sapphire substrates fabricated by wet chemical etching".CHINESE PHYSICS LETTERS 23.8(2006):2243. |
入库方式： OAI收割
来源：物理研究所
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