中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Magnetic and electronic transport properties of antiperovskite Mn3Cu(Ge)N thin films

文献类型:期刊论文

作者Na, YY ; Wang, C ; Chu, LH ; Ding, L ; Ji, NA ; Wang, JP ; Chen, XL
刊名MATERIALS LETTERS
出版日期2011
卷号65期号:15-16页码:2401
关键词SUBSTRATE
ISSN号0167-577X
通讯作者Wang, C: Beihang Univ, Ctr Condensed Matter & Mat Phys, Key Lab Micronaro Measurement Manipulat & Phys, Beijing 100191, Peoples R China.
中文摘要The antiperovskite structure Mn3Cu(Ge)N thin films were grown on single crystal Si (100) substrates by facing target magnetron sputtering. It is found that the films exhibit (100) preferred orientation. Ge-doping does not change the antiperovskite structure but leads to obvious changes in surface morphologies, magnetic and electronic transport properties. As a function of temperature, the resistivity of the films shows a semiconductor-type behavior. Moreover, it is worth noting that an abrupt change of resistivity is observed and magnetic ordering of the films changes from ferrimagnetic (FI) to antiferromagnetic (AFM) due to Ge-doping. In addition, both the transition temperature (T-t) and Neel temperature (T-N) move towards higher temperature with increasing Ge content. (C) 2011 Elsevier B.V. All rights reserved.
收录类别SCI
资助信息National Natural Science Foundation of China [50772008, 90922037]; National Science Foundation
语种英语
公开日期2013-09-18
源URL[http://ir.iphy.ac.cn/handle/311004/41134]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Na, YY,Wang, C,Chu, LH,et al. Magnetic and electronic transport properties of antiperovskite Mn3Cu(Ge)N thin films[J]. MATERIALS LETTERS,2011,65(15-16):2401.
APA Na, YY.,Wang, C.,Chu, LH.,Ding, L.,Ji, NA.,...&Chen, XL.(2011).Magnetic and electronic transport properties of antiperovskite Mn3Cu(Ge)N thin films.MATERIALS LETTERS,65(15-16),2401.
MLA Na, YY,et al."Magnetic and electronic transport properties of antiperovskite Mn3Cu(Ge)N thin films".MATERIALS LETTERS 65.15-16(2011):2401.

入库方式: OAI收割

来源:物理研究所

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