Magnetic and electronic transport properties of antiperovskite Mn3Cu(Ge)N thin films
文献类型:期刊论文
作者 | Na, YY ; Wang, C ; Chu, LH ; Ding, L ; Ji, NA ; Wang, JP ; Chen, XL |
刊名 | MATERIALS LETTERS
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出版日期 | 2011 |
卷号 | 65期号:15-16页码:2401 |
关键词 | SUBSTRATE |
ISSN号 | 0167-577X |
通讯作者 | Wang, C: Beihang Univ, Ctr Condensed Matter & Mat Phys, Key Lab Micronaro Measurement Manipulat & Phys, Beijing 100191, Peoples R China. |
中文摘要 | The antiperovskite structure Mn3Cu(Ge)N thin films were grown on single crystal Si (100) substrates by facing target magnetron sputtering. It is found that the films exhibit (100) preferred orientation. Ge-doping does not change the antiperovskite structure but leads to obvious changes in surface morphologies, magnetic and electronic transport properties. As a function of temperature, the resistivity of the films shows a semiconductor-type behavior. Moreover, it is worth noting that an abrupt change of resistivity is observed and magnetic ordering of the films changes from ferrimagnetic (FI) to antiferromagnetic (AFM) due to Ge-doping. In addition, both the transition temperature (T-t) and Neel temperature (T-N) move towards higher temperature with increasing Ge content. (C) 2011 Elsevier B.V. All rights reserved. |
收录类别 | SCI |
资助信息 | National Natural Science Foundation of China [50772008, 90922037]; National Science Foundation |
语种 | 英语 |
公开日期 | 2013-09-18 |
源URL | [http://ir.iphy.ac.cn/handle/311004/41134] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Na, YY,Wang, C,Chu, LH,et al. Magnetic and electronic transport properties of antiperovskite Mn3Cu(Ge)N thin films[J]. MATERIALS LETTERS,2011,65(15-16):2401. |
APA | Na, YY.,Wang, C.,Chu, LH.,Ding, L.,Ji, NA.,...&Chen, XL.(2011).Magnetic and electronic transport properties of antiperovskite Mn3Cu(Ge)N thin films.MATERIALS LETTERS,65(15-16),2401. |
MLA | Na, YY,et al."Magnetic and electronic transport properties of antiperovskite Mn3Cu(Ge)N thin films".MATERIALS LETTERS 65.15-16(2011):2401. |
入库方式: OAI收割
来源:物理研究所
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