Magnetic field mediated low-temperature resistivity upturn in electron-doped La1-xHfxMnO3 manganite oxides
文献类型:期刊论文
作者 | Guo, EJ ; Wang, L ; Wu, ZP ; Wang, L ; Lu, HB ; Jin, KJ ; Gao, J |
刊名 | JOURNAL OF APPLIED PHYSICS
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出版日期 | 2012 |
卷号 | 112期号:12 |
关键词 | COLOSSAL MAGNETORESISTANCE FERROMAGNETIC MANGANITES THIN-FILMS LA1-XCEXMNO3 LA1-XCAXMNO3 DEPENDENCE TRANSPORT GROWTH |
ISSN号 | 0021-8979 |
通讯作者 | Gao, J: Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. |
中文摘要 | The low-temperature transport properties were systematically studied on the electron-doped polycrystalline La1-xHfxMnO3(x=0.2 and 0.3) compounds at the presence of external magnetic fields. The resistivity of all samples exhibits a generally low-temperature resistance upturn behavior under zero magnetic field at the temperature of T-min, which first shifts towards lower temperature at low magnetic field (H<0.75 T) and then moves back to higher temperature as magnetic fields increase, which is greatly different with the previous results on the hole-doped manganites. The best fitting of low-temperature resistivity could be made by considering both electron-electron (e-e) interactions in terms of T-1/2 dependence and Kondo-like spin dependent scattering in terms of lnT dependence at all magnetic fields. Our results will be meaningful to understand the underlying physical mechanism of low-temperature resistivity minimum behavior in the electron-doped manganites. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770320] |
收录类别 | SCI |
资助信息 | Research Grant Council of Hong Kong [HKU702409P]; URC of the University of Hong Kong; National Natural Science Foundation of China; National Basic Research Program of China |
语种 | 英语 |
公开日期 | 2013-09-18 |
源URL | [http://ir.iphy.ac.cn/handle/311004/41218] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Guo, EJ,Wang, L,Wu, ZP,et al. Magnetic field mediated low-temperature resistivity upturn in electron-doped La1-xHfxMnO3 manganite oxides[J]. JOURNAL OF APPLIED PHYSICS,2012,112(12). |
APA | Guo, EJ.,Wang, L.,Wu, ZP.,Wang, L.,Lu, HB.,...&Gao, J.(2012).Magnetic field mediated low-temperature resistivity upturn in electron-doped La1-xHfxMnO3 manganite oxides.JOURNAL OF APPLIED PHYSICS,112(12). |
MLA | Guo, EJ,et al."Magnetic field mediated low-temperature resistivity upturn in electron-doped La1-xHfxMnO3 manganite oxides".JOURNAL OF APPLIED PHYSICS 112.12(2012). |
入库方式: OAI收割
来源:物理研究所
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