Magnetoresistance and anomalous Hall effect in magnetic ZnO films
文献类型：期刊论文
| 作者 | Xu, QY ; Hartmann, L ; Schmidt, H ; Hochmuth, H ; Lorenz, M ; Schmidt-Grund, R ; Sturm, C ; Spemann, D ; Grundmann, M ; Liu, YZ |
| 刊名 | JOURNAL OF APPLIED PHYSICS
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| 出版日期 | 2007 |
| 卷号 | 101期号:6 |
| ISSN号 | 0021-8979 |
| 中文摘要 | Magnetotransport measurements were performed on n-type conducting Co-doped ZnO and Mn-doped ZnO films prepared by pulsed laser deposition on a-plane sapphire substrates, and positive magnetoresistance (MR) was observed at low temperature. The positive MR decreases drastically with the free electron concentration n exceeding 10(19) cm(-3) and reveals almost the same dependency on n for Co-doped ZnO and Mn-doped ZnO. This hints towards a similar s-d exchange constant in both types of magnetic ZnO films. For Co-doped ZnO, the saturated anomalous Hall resistivity increases with decreasing electron concentration. No anomalous Hall effect was observed in Mn-doped ZnO. Within a free electron approximation the positive MR may be related with the spin polarization of conducting electrons due to s-d exchange interactions. The modeled spin splitting of the conduction band is smaller than 10 meV. (c) 2007 American Institute of Physics. |
| 收录类别 | SCI |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/41657]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xu, QY,Hartmann, L,Schmidt, H,et al. Magnetoresistance and anomalous Hall effect in magnetic ZnO films[J]. JOURNAL OF APPLIED PHYSICS,2007,101(6). |
| APA | Xu, QY.,Hartmann, L.,Schmidt, H.,Hochmuth, H.,Lorenz, M.,...&Liu, YZ.(2007).Magnetoresistance and anomalous Hall effect in magnetic ZnO films.JOURNAL OF APPLIED PHYSICS,101(6). |
| MLA | Xu, QY,et al."Magnetoresistance and anomalous Hall effect in magnetic ZnO films".JOURNAL OF APPLIED PHYSICS 101.6(2007). |
入库方式： OAI收割
来源：物理研究所
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