中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Magnetoresistance probe of ultrathin Mn(5)Ge(3) films with Anderson weak localization

文献类型:期刊论文

作者Chen, LJ ; Wang, DY ; Zhan, QF ; He, W ; Li, QA
刊名CHINESE PHYSICS LETTERS
出版日期2008
卷号25期号:7页码:2625
关键词CONDUCTION INJECTION 1T-TAS2
ISSN号0256-307X
通讯作者Chen, LJ: Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, Beijing 100190, Peoples R China.
中文摘要We present the magnetoresistance measurements of ultrathin Mn(5) Ge(3) films with different thicknesses at low temperatures. Owing to the lattice mismatch between Mn(5)Ge(3) and Cc (111), the thickness of Mn(5) Ge(3) films has a significant effect on the magnetoresistance. When the thickness of Mn is more than 72 monolayers (MLs), the magnetoresistance of the Mn(5)Ge(3) films appears a peak at about 6kOe, which shows that the magnetoresistance results from the Anderson weak localization effect and the variable range hopping in the presence of a magnetic field. The magnetic and semiconducting properties indicate that the Mn(5)Ge(3) film is a potential material for spin injection.
收录类别SCI
语种英语
公开日期2013-09-18
源URL[http://ir.iphy.ac.cn/handle/311004/41684]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Chen, LJ,Wang, DY,Zhan, QF,et al. Magnetoresistance probe of ultrathin Mn(5)Ge(3) films with Anderson weak localization[J]. CHINESE PHYSICS LETTERS,2008,25(7):2625.
APA Chen, LJ,Wang, DY,Zhan, QF,He, W,&Li, QA.(2008).Magnetoresistance probe of ultrathin Mn(5)Ge(3) films with Anderson weak localization.CHINESE PHYSICS LETTERS,25(7),2625.
MLA Chen, LJ,et al."Magnetoresistance probe of ultrathin Mn(5)Ge(3) films with Anderson weak localization".CHINESE PHYSICS LETTERS 25.7(2008):2625.

入库方式: OAI收割

来源:物理研究所

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