mc-Si : H/c-Si solar cell prepared by PECVD
文献类型：期刊论文
| 作者 | Xu, Y ; Liao, XB ; Diao, HW ; Li, XD ; Zeng, XB ; Liu, XP ; Wang, MH ; Wang, WJ |
| 刊名 | RARE METALS
 |
| 出版日期 | 2006 |
| 卷号 | 25页码:176 |
| 关键词 | HETEROJUNCTION |
| ISSN号 | 1001-0521 |
| 通讯作者 | Xu, Y: Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, Beijing 100083, Peoples R China. |
| 中文摘要 | Hetero-junction solar cells with an me-Si: H window layer were achieved. The open voltage is increased while short current is decreased with increasing the mc-Si:H layer's thickness of emitter layer. The highest of V-oc of 597 mV has obtained. When fixed the thickness of 30 nm, changing the N type from amorphous silicon layer to micro-crystalline layer, the efficiency of the hetero-junction solar cells is increased. Although the hydrogen etching before deposition enables the c-Si substrates to become rough by AFM images, it enhances the formation of epitaxial-like micro-crystalline silicon and better parameters of solar cell can be obtained by implying this process. The best result of efficiency is 13.86% with the V-oc of 549.8 mV, J(sc) of 32.19 mA center dot cm(-2) and the cell's area of 1 cm(2). |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/41796]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xu, Y,Liao, XB,Diao, HW,et al. mc-Si : H/c-Si solar cell prepared by PECVD[J]. RARE METALS,2006,25:176. |
| APA | Xu, Y.,Liao, XB.,Diao, HW.,Li, XD.,Zeng, XB.,...&Wang, WJ.(2006).mc-Si : H/c-Si solar cell prepared by PECVD.RARE METALS,25,176. |
| MLA | Xu, Y,et al."mc-Si : H/c-Si solar cell prepared by PECVD".RARE METALS 25(2006):176. |
入库方式： OAI收割
来源：物理研究所
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