Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation
文献类型：期刊论文
| 作者 | Wei, TB ; Hu, Q ; Duan, RF ; Wang, JX ; Zeng, YP ; Li, JM ; Yang, Y ; Liu, YL |
| 刊名 | NANOSCALE RESEARCH LETTERS
 |
| 出版日期 | 2009 |
| 卷号 | 4期号:7页码:753 |
| 关键词 | PLASTIC PROPERTIES PLANE SAPPHIRE INDENTATION |
| ISSN号 | 1931-7573 |
| 通讯作者 | Wei, TB: Chinese Acad Sci, Semicond Lighting Technol Res & Dev Ctr, Inst Semicond, Beijing 100083, Peoples R China. |
| 中文摘要 | In this study, the deformation mechanisms of nonpolar GaN thick films grown on m-sapphire by hydride vapor phase epitaxy (HVPE) are investigated using nanoindentation with a Berkovich indenter, cathodoluminescence (CL), and Raman microscopy. Results show that nonpolar GaN is more susceptible to plastic deformation and has lower hardness than c-plane GaN. After indentation, lateral cracks emerge on the nonpolar GaN surface and preferentially propagate parallel to the < 11 (2) over bar0 > orientation due to anisotropic defect-related stresses. Moreover, the quenching of CL luminescence can be observed to extend exclusively out from the center of the indentations along the < 11 (2) over bar0 > orientation, a trend which is consistent with the evolution of cracks. The recrystallization process happens in the indented regions for the load of 500 mN. Raman area mapping indicates that the distribution of strain field coincides well with the profile of defect-expanded dark regions, while the enhanced compressive stress mainly concentrates in the facets of the indentation. |
| 收录类别 | SCI |
| 资助信息 | National High Technology Program of China [2006AA03A143]; National Natural Sciences Foundation of China [60806001]; Knowledge Innovation Program of the Chinese Academy of Sciences [ISCAS2008T03] |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/41858]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wei, TB,Hu, Q,Duan, RF,et al. Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation[J]. NANOSCALE RESEARCH LETTERS,2009,4(7):753. |
| APA | Wei, TB.,Hu, Q.,Duan, RF.,Wang, JX.,Zeng, YP.,...&Liu, YL.(2009).Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation.NANOSCALE RESEARCH LETTERS,4(7),753. |
| MLA | Wei, TB,et al."Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation".NANOSCALE RESEARCH LETTERS 4.7(2009):753. |
入库方式： OAI收割
来源：物理研究所
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