Mechanism of donor-acceptor pair recombination in Mg-doped GaN epilayers grown on sapphire substrates
文献类型：期刊论文
| 作者 | Kang, TW ; Park, SH ; Song, H ; Kim, TW ; Yoon, GS ; Kim, CO |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 1998 |
| 卷号 | 84期号:4页码:2082 |
| 关键词 | MOLECULAR-BEAM EPITAXY VAPOR-PHASE EPITAXY P-TYPE CONDUCTION DEEP-LEVEL ENERGY FILMS |
| ISSN号 | 0021-8979 |
| 通讯作者 | Kang, TW: Dongguk Univ, Dept Phys, Seoul 100715, South Korea. |
| 中文摘要 | Preferential (001) orientation CeO2 films have been successfully grown on biaxially textured Ni substrates using ion beam assisted pulsed laser deposition. The x-ray diffraction (XRD) patterns for the CeO2 films and target have been measured. The in-plane lattice constants have been derived from the data of XRD. It was found that the in-plane lattice constants of the films increase with increasing deposition temperature. A reasonable explanation based on the difference of the linear thermal expansion coefficient between the CeO2 film and Ni substrate was proposed. Moreover, Raman spectra of the films and target have been recorded. It was shown that the oxygen deficiency in the CeO2 samples has a great effect on the full width at half maximum of the Raman lines. According to the relation between the Gruneisen shift and the lattice contraction, we have obtained the theoretical Raman shifts which are in good agreement with the experimental results. (C) 1998 American Institute of Physics. [S0021-8979(98)04116-4]. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/41873]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Kang, TW,Park, SH,Song, H,et al. Mechanism of donor-acceptor pair recombination in Mg-doped GaN epilayers grown on sapphire substrates[J]. JOURNAL OF APPLIED PHYSICS,1998,84(4):2082. |
| APA | Kang, TW,Park, SH,Song, H,Kim, TW,Yoon, GS,&Kim, CO.(1998).Mechanism of donor-acceptor pair recombination in Mg-doped GaN epilayers grown on sapphire substrates.JOURNAL OF APPLIED PHYSICS,84(4),2082. |
| MLA | Kang, TW,et al."Mechanism of donor-acceptor pair recombination in Mg-doped GaN epilayers grown on sapphire substrates".JOURNAL OF APPLIED PHYSICS 84.4(1998):2082. |
入库方式： OAI收割
来源：物理研究所
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