Mechanism of the Band Gap Opening across the Order-Disorder Transition of Si(111)(4x1)-In
文献类型：期刊论文
| 作者 | Gonzalez, C ; Guo, JD ; Ortega, J ; Flores, F ; Weitering, HH |
| 刊名 | PHYSICAL REVIEW LETTERS
 |
| 出版日期 | 2009 |
| 卷号 | 102期号:11 |
| 关键词 | SCANNING-TUNNELING-MICROSCOPY METAL-INSULATOR-TRANSITION SURFACE SI(111) CHAINS RECONSTRUCTIONS INSTABILITY |
| ISSN号 | 0031-9007 |
| 通讯作者 | Gonzalez, C: Univ Autonoma Madrid, Dept Fis Teor Mat Condensada, E-28049 Madrid, Spain. |
| 中文摘要 | The ground state properties of indium atom chains on the Si(111)8x2-In surface and the nature of their insulator-metal (IM) transition near 120 K are under intense dispute. We compare experimental scanning tunneling microscopy (STM) images of the low temperature (LT) 8x2 phase with STM image calculations from Density Functional Theory (DFT). Our LT studies clearly indicate the existence of a frozen shear distortion between neighboring atom chains, resulting in the formation of indium hexagons. Tunneling spectra furthermore indicate that the IM transition coincides with the collapse of a similar to 0.3 eV surface-state band gap at the Gamma point of the 4x2 Brillouin zone. This implies that the IM transition is driven by a shear phonon, not by Fermi surface nesting. |
| 收录类别 | SCI |
| 资助信息 | NSF [DMR 0606485]; Oak Ridge National Laboratory; US Department of Energy [DE-AC05-00OR22725]; Spanish Ministerio de Ciencia e Innovacion [2007-0034, MAT-2007-60966] |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/41879]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Gonzalez, C,Guo, JD,Ortega, J,et al. Mechanism of the Band Gap Opening across the Order-Disorder Transition of Si(111)(4x1)-In[J]. PHYSICAL REVIEW LETTERS,2009,102(11). |
| APA | Gonzalez, C,Guo, JD,Ortega, J,Flores, F,&Weitering, HH.(2009).Mechanism of the Band Gap Opening across the Order-Disorder Transition of Si(111)(4x1)-In.PHYSICAL REVIEW LETTERS,102(11). |
| MLA | Gonzalez, C,et al."Mechanism of the Band Gap Opening across the Order-Disorder Transition of Si(111)(4x1)-In".PHYSICAL REVIEW LETTERS 102.11(2009). |
入库方式： OAI收割
来源：物理研究所
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