Mechanisms of asymmetric leakage current in Pt/Ba0.6Sr0.4TiO3/Nb-SrTiO3 capacitor
文献类型:期刊论文
作者 | Wang, SY ; Cheng, BL ; Wang, C ; Dai, SY ; Lu, HB ; Zhou, YL ; Chen, ZH ; Yang, GZ |
刊名 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
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出版日期 | 2005 |
卷号 | 81期号:6页码:1265 |
关键词 | (BA ELECTRICAL-PROPERTIES ELECTRODE HETEROSTRUCTURES RESISTANCE SR)TIO3 THIN-FILMS |
ISSN号 | 0947-8396 |
通讯作者 | Wang, SY: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China. |
中文摘要 | Mechanisms of leakage current have been investigated in the capacitor consisting of a Ba0.6Sr0.4TiO3 thin film, a Pt top electrode, and a Nb-doped SrTiO3 (STON) bottom electrode. The leakage current shows asymmetric behavior for different bias voltage. For the Pt electrode negatively biased, the leakage current can be explained by modified Schottky emission mechanism, and the barrier height is obtained as 0.44 eV. For the Pt electrode positively biased, the leakage current shows a space-charge-limited current behavior. The trap in dielectric film is regarded as deep traps, and the density of trapped carrier is estimated as about 3.2 x 10(23)/m(3). |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-18 |
源URL | [http://ir.iphy.ac.cn/handle/311004/41885] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Wang, SY,Cheng, BL,Wang, C,et al. Mechanisms of asymmetric leakage current in Pt/Ba0.6Sr0.4TiO3/Nb-SrTiO3 capacitor[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2005,81(6):1265. |
APA | Wang, SY.,Cheng, BL.,Wang, C.,Dai, SY.,Lu, HB.,...&Yang, GZ.(2005).Mechanisms of asymmetric leakage current in Pt/Ba0.6Sr0.4TiO3/Nb-SrTiO3 capacitor.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,81(6),1265. |
MLA | Wang, SY,et al."Mechanisms of asymmetric leakage current in Pt/Ba0.6Sr0.4TiO3/Nb-SrTiO3 capacitor".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 81.6(2005):1265. |
入库方式: OAI收割
来源:物理研究所
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