中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Mechanisms of asymmetric leakage current in Pt/Ba0.6Sr0.4TiO3/Nb-SrTiO3 capacitor

文献类型:期刊论文

作者Wang, SY ; Cheng, BL ; Wang, C ; Dai, SY ; Lu, HB ; Zhou, YL ; Chen, ZH ; Yang, GZ
刊名APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
出版日期2005
卷号81期号:6页码:1265
关键词(BA ELECTRICAL-PROPERTIES ELECTRODE HETEROSTRUCTURES RESISTANCE SR)TIO3 THIN-FILMS
ISSN号0947-8396
通讯作者Wang, SY: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China.
中文摘要Mechanisms of leakage current have been investigated in the capacitor consisting of a Ba0.6Sr0.4TiO3 thin film, a Pt top electrode, and a Nb-doped SrTiO3 (STON) bottom electrode. The leakage current shows asymmetric behavior for different bias voltage. For the Pt electrode negatively biased, the leakage current can be explained by modified Schottky emission mechanism, and the barrier height is obtained as 0.44 eV. For the Pt electrode positively biased, the leakage current shows a space-charge-limited current behavior. The trap in dielectric film is regarded as deep traps, and the density of trapped carrier is estimated as about 3.2 x 10(23)/m(3).
收录类别SCI
语种英语
公开日期2013-09-18
源URL[http://ir.iphy.ac.cn/handle/311004/41885]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
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GB/T 7714
Wang, SY,Cheng, BL,Wang, C,et al. Mechanisms of asymmetric leakage current in Pt/Ba0.6Sr0.4TiO3/Nb-SrTiO3 capacitor[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2005,81(6):1265.
APA Wang, SY.,Cheng, BL.,Wang, C.,Dai, SY.,Lu, HB.,...&Yang, GZ.(2005).Mechanisms of asymmetric leakage current in Pt/Ba0.6Sr0.4TiO3/Nb-SrTiO3 capacitor.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,81(6),1265.
MLA Wang, SY,et al."Mechanisms of asymmetric leakage current in Pt/Ba0.6Sr0.4TiO3/Nb-SrTiO3 capacitor".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 81.6(2005):1265.

入库方式: OAI收割

来源:物理研究所

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