Melt growth of striation and etch pit free GaSb under microgravity
文献类型：期刊论文
| 作者 | Nishinaga, T ; Ge, P ; Huo, C ; He, J ; Nakamura, T |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 1997 |
| 卷号 | 174期号:1-4页码:96 |
| ISSN号 | 0022-0248 |
| 通讯作者 | Nishinaga, T: UNIV TOKYO,GRAD SCH ENGN,DEPT ELECT ENGN,BUNKYO KU,7-3-1 HONGO,TOKYO 113,JAPAN. |
| 中文摘要 | Te doped GaSb grown by gradient freeze technique under microgravity was characterized by chemical etching. It was found that nearly half of the space grown part was processed without contact with the ampoule wall. The grown crystal was cut longitudinally along the growth direction [111] into two parts and among them one piece was further cut perpendicular to the growth direction, Each sample was polished mechanically and chemically etched to reveal impurity striations and dislocations. It was shown that impurity striations are present in the earth grown part while they are absent in the space grown part. It was also demonstrated that the etch-pit density tends to zero in the space grown part, where the melt did not touch the ampoule wall, but it increases steeply in the part where strong contact with the wall occurred. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/41891]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Nishinaga, T,Ge, P,Huo, C,et al. Melt growth of striation and etch pit free GaSb under microgravity[J]. JOURNAL OF CRYSTAL GROWTH,1997,174(1-4):96. |
| APA | Nishinaga, T,Ge, P,Huo, C,He, J,&Nakamura, T.(1997).Melt growth of striation and etch pit free GaSb under microgravity.JOURNAL OF CRYSTAL GROWTH,174(1-4),96. |
| MLA | Nishinaga, T,et al."Melt growth of striation and etch pit free GaSb under microgravity".JOURNAL OF CRYSTAL GROWTH 174.1-4(1997):96. |
入库方式： OAI收割
来源：物理研究所
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