Memory and tunneling effects in metal-semiconductor-metal contacts
文献类型：期刊论文
| 作者 | Li, HW ; Wang, TH |
| 刊名 | PHYSICS OF LOW-DIMENSIONAL STRUCTURES
 |
| 出版日期 | 2001 |
| 卷号 | 5-6页码:129 |
| 关键词 | FIELD-EFFECT TRANSISTOR INAS QUANTUM DOTS TEMPERATURE-DEPENDENCE PHOTODIODE STRUCTURES SCHOTTKY DIODES |
| ISSN号 | 0204-3467 |
| 通讯作者 | Li, HW: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The current-voltage (I-V) characteristics of the metal-semiconductor-metal diodes, in which a layer of InAs self-assembled quantum dots (SA QDs) is embedded, are studied in the temperature range from 77 K to 292 K. Both the memory effect of QDs and the tunneling effect through the energy levels of QDs are observed. The hysteresis loops diminish with increasing temperature, which is the result of the thermally activated escape process. The influence of the tunneling process on the hysteresis loops is analyzed as a function of temperature. In addition, the characteristics of our metal-semiconductor contacts are analyzed based on the reverse biased I-V curves. The saturation current density and the ideality factor are obtained as functions of temperature. The memory effect and the tunneling effect can be revealed from the results. The ideality factor increases as the temperature is raised, which is attributed to the stronger tunneling effect because the quantum levels of QDs and wetting layer shift to law energies at high temperatures. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/41902]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, HW,Wang, TH. Memory and tunneling effects in metal-semiconductor-metal contacts[J]. PHYSICS OF LOW-DIMENSIONAL STRUCTURES,2001,5-6:129. |
| APA | Li, HW,&Wang, TH.(2001).Memory and tunneling effects in metal-semiconductor-metal contacts.PHYSICS OF LOW-DIMENSIONAL STRUCTURES,5-6,129. |
| MLA | Li, HW,et al."Memory and tunneling effects in metal-semiconductor-metal contacts".PHYSICS OF LOW-DIMENSIONAL STRUCTURES 5-6(2001):129. |
入库方式： OAI收割
来源：物理研究所
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