Metallization of Cu3N semiconductor under high pressure
文献类型：期刊论文
| 作者 | Yang, LX ; Zhao, JG ; Yu, Y ; Li, FY ; Yu, RC ; Jin, CQ |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2006 |
| 卷号 | 23期号:2页码:426 |
| 关键词 | INDUCED SUPERCONDUCTIVITY |
| ISSN号 | 0256-307X |
| 通讯作者 | Jin, CQ: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Using the four-probe method, we investigate the electrical conductivity of Cu3N under high pressure with the diamond anvil cell. Cu3N is a semiconductor at ambient pressure showing a band gap about 1 eV. With the application of quasi-hydrostatic pressures, its resistance decreases dramatically over five orders of magnitude from ambient to 9 GPa. The compound became a metal at pressure about 5.5 GPa, which is in well agreement with the recent first principle calculation. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/41933]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yang, LX,Zhao, JG,Yu, Y,et al. Metallization of Cu3N semiconductor under high pressure[J]. CHINESE PHYSICS LETTERS,2006,23(2):426. |
| APA | Yang, LX,Zhao, JG,Yu, Y,Li, FY,Yu, RC,&Jin, CQ.(2006).Metallization of Cu3N semiconductor under high pressure.CHINESE PHYSICS LETTERS,23(2),426. |
| MLA | Yang, LX,et al."Metallization of Cu3N semiconductor under high pressure".CHINESE PHYSICS LETTERS 23.2(2006):426. |
入库方式： OAI收割
来源：物理研究所
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