Microfabrication methods of magnetic tunnel junctions with high tunneling magnetoresistance
文献类型：期刊论文
| 作者 | Li, FF ; Zhang, XQ ; Du, GX ; Wang, TX ; Zeng, ZM ; Wei, HX ; Han, XF |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2005 |
| 卷号 | 54期号:8页码:3831 |
| 关键词 | CO75FE25 FERROMAGNETIC ELECTRODES ROOM-TEMPERATURE FILMS SPIN MEMORY FIELD |
| ISSN号 | 1000-3290 |
| 通讯作者 | Li, FF: Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, Beijing 100080, Peoples R China. |
| 中文摘要 | In this work, on the one hand, the contact-shadow-mask method and technique were used to micro-fabricate the magnetic tunnel junction (MTJ) and optimize the experimental conditions. The width of the gap for the long and narrow top or bottom magneto-electrode is 100 mu m, which can be used to deposit MTJs and form a cross strip with the tunnel section of 100 mu m x 100 mu m. The MTJs with tunneling magnetoresistance (TMR) ratio of 30%-48% can be directly obtained for the structure of Ta(5 nm)/Cu(25 nm)/Ni79Fe21(5 nm)/Ir22Mn78(10 nm)/Co75Fe25(4 nm)/Al(0.8 nm)-O/Co75Fe25(4 nm)/Ni79Fe21(20 nm)/Ta(5 nm). On the other hand, the MTJs with high TMR ratio and small active area from 20 mu m X 40 mu m down to 4 mu m x 8 mu m were fabricated using two optical lithography methods of milling contact hole and lift-off resist, combined with Ar ion-beam etching or CF4 reactive etching techniques. Then, the TMR ratio from 22% up to 50% can he achieved before and after annealing at around 300 degrees C for 1 h. Our investigation shows that the patterned MTJs, which were microfabricated using the two optical lithography methods stated above, can be used as the fundamental element of magnetoresistive random access memory, magnetic read-heads in hard disk drives and the field sensitive sensor. |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/42004]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, FF,Zhang, XQ,Du, GX,et al. Microfabrication methods of magnetic tunnel junctions with high tunneling magnetoresistance[J]. ACTA PHYSICA SINICA,2005,54(8):3831. |
| APA | Li, FF.,Zhang, XQ.,Du, GX.,Wang, TX.,Zeng, ZM.,...&Han, XF.(2005).Microfabrication methods of magnetic tunnel junctions with high tunneling magnetoresistance.ACTA PHYSICA SINICA,54(8),3831. |
| MLA | Li, FF,et al."Microfabrication methods of magnetic tunnel junctions with high tunneling magnetoresistance".ACTA PHYSICA SINICA 54.8(2005):3831. |
入库方式： OAI收割
来源：物理研究所
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