Microfabrication of magnetic tunnel junctions on 4-inch Si/SiO2 substrate
文献类型：期刊论文
| 作者 | Wang, TX ; Wei, HX ; Li, FF ; Zhang, AG ; Zeng, ZM ; Zhan, WS ; Han, XF |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2004 |
| 卷号 | 53期号:11页码:3895 |
| 关键词 | CO75FE25 FERROMAGNETIC ELECTRODES MAGNETORESISTANCE DEPENDENCE BARRIER MICROSTRUCTURE FABRICATION TEMPERATURE MAGNON MEMORY ALN |
| ISSN号 | 1000-3290 |
| 通讯作者 | Wang, TX: Chinese Acad Sci, State Key Lab Magnetism, Inst Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | Magnetic tunnel junctions (MTJs) with different sizes from 5mum x 5mum to 15mum x 60mum were fabricated on 4-inch Si/SiO2 substrates. Their magnetoelectronic properties were investigated using the four-probe measuring system. The typical values of junction resistance-area product and tunneling magnetoresistance (TMR) ratio of the MTJs are 16 kOmegamum(2) and 18% respectively. The absolute errors of junction resistance-area product and TMR ratio are within 10% and 7% respectively for all the MTJs. All of the MTJs fabricated and measured show a good uniformity. Our experimental results show that such MTJs can be used to fabricate the prototype demonstration devices for magnetoresistive random access memory. |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/42005]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, TX,Wei, HX,Li, FF,et al. Microfabrication of magnetic tunnel junctions on 4-inch Si/SiO2 substrate[J]. ACTA PHYSICA SINICA,2004,53(11):3895. |
| APA | Wang, TX.,Wei, HX.,Li, FF.,Zhang, AG.,Zeng, ZM.,...&Han, XF.(2004).Microfabrication of magnetic tunnel junctions on 4-inch Si/SiO2 substrate.ACTA PHYSICA SINICA,53(11),3895. |
| MLA | Wang, TX,et al."Microfabrication of magnetic tunnel junctions on 4-inch Si/SiO2 substrate".ACTA PHYSICA SINICA 53.11(2004):3895. |
入库方式： OAI收割
来源：物理研究所
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