中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Micromachining of SrTiO3 steps for high-T-c step edge junction dc SQUIDs

文献类型:期刊论文

作者Wang, J ; Han, B ; Chen, GH ; Xu, FZ ; Yang, QS ; Cui, TH
刊名JOURNAL OF MICROMECHANICS AND MICROENGINEERING
出版日期2004
卷号14期号:1页码:1
关键词EPITAXIAL YBA2CU3O7 FILMS JOSEPHSON-JUNCTIONS MICROSTRUCTURE
ISSN号0960-1317
通讯作者Wang, J: Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China.
中文摘要In this paper, we establish a model of the micromachined SrTiO3 substrate steps for high-T-c direct-current (dc) superconducting quantum interference devices (SQUIDs). The step angle is determined by the local ion milling rate and re-deposition rate, which is caused by back sputtering of ion milling. At dynamic balance, the maximum possible step angle is predicted to be 75degrees with an ion beam incidence angle of 45degrees, which agrees well with the measured value of 71degrees. In order to obtain a better step sidewall profile, we consider the influences of Nb metal mask micromachining. To avoid a rounded angle at the step upper corner, the minimum thickness of the Nb mask should be 440 nm when the desired step height is 300 nm. At optimized process conditions, steps with sharp, steep angles, and flawless profiles have been fabricated. Nine of the twelve dc SQUIDs thus obtained exhibited resistively shunted junction current-voltage behavior and magnetic field modulation at 77 K.
收录类别SCI
语种英语
公开日期2013-09-18
源URL[http://ir.iphy.ac.cn/handle/311004/42009]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Wang, J,Han, B,Chen, GH,et al. Micromachining of SrTiO3 steps for high-T-c step edge junction dc SQUIDs[J]. JOURNAL OF MICROMECHANICS AND MICROENGINEERING,2004,14(1):1.
APA Wang, J,Han, B,Chen, GH,Xu, FZ,Yang, QS,&Cui, TH.(2004).Micromachining of SrTiO3 steps for high-T-c step edge junction dc SQUIDs.JOURNAL OF MICROMECHANICS AND MICROENGINEERING,14(1),1.
MLA Wang, J,et al."Micromachining of SrTiO3 steps for high-T-c step edge junction dc SQUIDs".JOURNAL OF MICROMECHANICS AND MICROENGINEERING 14.1(2004):1.

入库方式: OAI收割

来源:物理研究所

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