Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors
文献类型：期刊论文
| 作者 | Dun, SB ; Jiang, Y ; Li, JQ ; Fang, YL ; Yin, JY ; Liu, B ; Wang, JJ ; Chen, H ; Feng, ZH ; Cai, SJ |
| 刊名 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
 |
| 出版日期 | 2012 |
| 卷号 | 209期号:6页码:1174 |
| 关键词 | PIEZOELECTRIC POLARIZATION ELECTRON GAN HETEROSTRUCTURES SIMULATION DEFECTS |
| ISSN号 | 1862-6300 |
| 通讯作者 | Feng, ZH: Hebei Semicond Res Inst, Sci & Technol ASIC Lab, Shijiazhuang 050051, Peoples R China. |
| 中文摘要 | The achievement of ultrafast all-optical switching on chip is a fundamental issue of all-optical integration. A feasible and promising method for this is to combine semiconductor photonic crystals with highly nonlinear polymer materials to form the hybrid nonlinear photonic crystal. In this paper we numerically investigate the femtosecond dynamic response of all-optical switching based on the effect of band gap edge shift in one-dimensional (1D) semiconductor-polymer hybrid nonlinear photonic crystal (NPC) structures. Taking into account the Kerr relaxation time of the polymer and semiconductor materials simultaneously, the introduction of highly nonlinear polymer materials with femtosecond relaxation time can realize all-optical switching in the femtosecond range in spite of the low response speed of the semiconductor materials. The physical origin is the large and ultrafast response Kerr nonlinearity of the polymer materials and this is proved by examining the dependence of switching time on the relaxation speed of the polymer materials. The results can be extended to 2D and 3D NPC structures. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [60890192, 60876009] |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/42022]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Dun, SB,Jiang, Y,Li, JQ,et al. Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2012,209(6):1174. |
| APA | Dun, SB.,Jiang, Y.,Li, JQ.,Fang, YL.,Yin, JY.,...&Cai, SJ.(2012).Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,209(6),1174. |
| MLA | Dun, SB,et al."Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 209.6(2012):1174. |
入库方式： OAI收割
来源：物理研究所
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