Micro-Raman study on hydrogenated protocrystalline silicon films
文献类型：期刊论文
| 作者 | Zhang, SB ; Liao, XB ; An, L ; Yang, FH ; Kong, GL ; Wang, YQ ; Xu, YY ; Chen, CY ; Diao, HW |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2002 |
| 卷号 | 51期号:8页码:1811 |
| 关键词 | SI-H FILMS MICROCRYSTALLINE SILICON AMORPHOUS SI LIGHT-SCATTERING SPECTRA |
| ISSN号 | 1000-3290 |
| 通讯作者 | Zhang, SB: Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China. |
| 中文摘要 | Good quality hydrogenated protocrystalline silicon films were successfully prepared by radio frequency plasma enhanced chemical vapor deposition (PECVD) with various hydrogen dilution ratios (R = ([H-2]/[SiH4]) from 10 to 100). The photosensitivity of the films is up to 10(6) under the light intensity of 50mW.cm(-2). The microstructure of the films was studied by micro-region Raman scattering spectra at room temperature. The deconvolution of the Raman spectra by Gaussion functions shows that the films deposited under low hydrogen dilution ratios (R < 33) exhibit typical amorphous properties, while the films deposited under high hydrogen dilution ratios (R > 50) possess a diphasic structure, with increasing crystalline volume fraction with R. The size of the crystallites in the diphasic films is about 2.4 mm, which was deduced from the phonon confinement model. The intermediate range order of the silicon film increases with increasing hydrogen dilution ratio. |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/42024]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, SB,Liao, XB,An, L,et al. Micro-Raman study on hydrogenated protocrystalline silicon films[J]. ACTA PHYSICA SINICA,2002,51(8):1811. |
| APA | Zhang, SB.,Liao, XB.,An, L.,Yang, FH.,Kong, GL.,...&Diao, HW.(2002).Micro-Raman study on hydrogenated protocrystalline silicon films.ACTA PHYSICA SINICA,51(8),1811. |
| MLA | Zhang, SB,et al."Micro-Raman study on hydrogenated protocrystalline silicon films".ACTA PHYSICA SINICA 51.8(2002):1811. |
入库方式： OAI收割
来源：物理研究所
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