Microstructural studies of Fe-silicide films produced by metal vapor vacuum arc ion implantation of Fe into Si substrates
文献类型：期刊论文
| 作者 | Jin, S ; Bender, H ; Li, XN ; Zhang, Z ; Dong, C ; Gong, ZX ; Ma, TC |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 1997 |
| 卷号 | 115期号:2页码:116 |
| 关键词 | SOLID-PHASE EPITAXY SEMICONDUCTING FESI2 MICROSCOPY |
| ISSN号 | 0169-4332 |
| 通讯作者 | Jin, S: IMEC,KAPELDREEF 75,B-3001 LOUVAIN,BELGIUM. |
| 中文摘要 | Iron-silicide films have been formed by metal vapor vacuum are (Mevva) ion implantation of iron into (111) and (100) oriented silicon wafers. In the as-implanted samples with a dose of 1 x 10(17) ions/cm(2), metastable gamma-FeSi2 is the dominant phase accompanied by a small fraction of the CsCl-derived defect phase Fe1-xSi. The silicide grains form a surface layer on (111) silicon, whereas they are embedded in(100) silicon substrate at a depth of 30 nm, In the samples with a higher dose of 4 x 10(17) ions/cm(2), a primitive orthorhombic FeSi2 phase is formed, Some grains with this new structure contain stacking faults which are lying on (100) planes. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/42049]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Jin, S,Bender, H,Li, XN,et al. Microstructural studies of Fe-silicide films produced by metal vapor vacuum arc ion implantation of Fe into Si substrates[J]. APPLIED SURFACE SCIENCE,1997,115(2):116. |
| APA | Jin, S.,Bender, H.,Li, XN.,Zhang, Z.,Dong, C.,...&Ma, TC.(1997).Microstructural studies of Fe-silicide films produced by metal vapor vacuum arc ion implantation of Fe into Si substrates.APPLIED SURFACE SCIENCE,115(2),116. |
| MLA | Jin, S,et al."Microstructural studies of Fe-silicide films produced by metal vapor vacuum arc ion implantation of Fe into Si substrates".APPLIED SURFACE SCIENCE 115.2(1997):116. |
入库方式： OAI收割
来源：物理研究所
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