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Chinese Academy of Sciences Institutional Repositories Grid
Microstructural study of ramp type multilayer Josephson junctions with different ramp slopes

文献类型:期刊论文

作者Yang, Y ; Gao, J ; Sun, JL ; Chui, TC ; Li, L
刊名PHYSICA C
出版日期1998
卷号300期号:1-2页码:151
关键词YBA2CU3OX/PRBA2CU3OX/YBA2CU3OX BARRIERS
ISSN号0921-4534
通讯作者Gao, J: Univ Hong Kong, Dept Phys, Hong Kong, Peoples R China.
中文摘要The microstructures of YBa2Cu3O7-delta/PrBa2Cu3O7-delta/YBa2Cu3O7-delta ramp type Josephson junctions with different ramp slopes fabricated on (100) SrTiO3 substrates were studied by means of transmission electron microscopy. The results show that for the ramp slope angles of 15 degrees-40 degrees, the epitaxy was still remained through all layers at the ramp region without the formation of big grain boundaries. No amorphous layers and secondary phases were observed at the barrier interfaces. For a gentle ramp junction, small misoriented grains appeared in some portions of the barrier. The substrate ramp formed during the ion etching process had little influence on the growth of the upper layers. For a steep ramp junction, a dimple was created in the substrate, which caused the bending in the film and the nucleation of misoriented grains, although the epitaxy of the barrier was of good quality. The results demonstrate that the slope angle of the junction ramp is an important factor that influences the performance of the Josephson junctions. (C) 1998 Elsevier Science B.V.
收录类别SCI
语种英语
公开日期2013-09-18
源URL[http://ir.iphy.ac.cn/handle/311004/42051]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Yang, Y,Gao, J,Sun, JL,et al. Microstructural study of ramp type multilayer Josephson junctions with different ramp slopes[J]. PHYSICA C,1998,300(1-2):151.
APA Yang, Y,Gao, J,Sun, JL,Chui, TC,&Li, L.(1998).Microstructural study of ramp type multilayer Josephson junctions with different ramp slopes.PHYSICA C,300(1-2),151.
MLA Yang, Y,et al."Microstructural study of ramp type multilayer Josephson junctions with different ramp slopes".PHYSICA C 300.1-2(1998):151.

入库方式: OAI收割

来源:物理研究所

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