Microstructural study of tilted epitaxial thin films of YBa2Cu3O7-delta with a (105) orientation
文献类型：期刊论文
| 作者 | Yang, Y ; Gao, J ; Chui, TC ; Li, L |
| 刊名 | PHYSICA C
 |
| 出版日期 | 1997 |
| 卷号 | 290期号:1-2页码:23 |
| 关键词 | ANISOTROPY RESISTIVITY PLANE |
| ISSN号 | 0921-4534 |
| 通讯作者 | Gao, J: Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong. |
| 中文摘要 | Cross-sectional transmission electron microscopic studies have been carried out on (105) oriented YBa2Cu3O7-delta thin films. The coherently tilted films were grown on (305) SrTiO3 substrates prepared by rf magnetron sputtering. Our results showed that the grown films were highly epitaxial, almost single domain and free of twins, except for the presence of some small antidomains near the interface between the film and the substrate. It was found that the YBa2Cu3O7-delta film covered the surface steps with the c-axis tilted at an angle of 31 degrees referred to the normal direction of the substrate surface. Planar defects, such as stacking faults, could be observed in the films. Secondary phases were formed mainly due to the surface defects of the substrate, but the further growth of these secondary phase precipitates was effectively restrained by the growth of YBa2Cu3O7-delta film with the desired orientation, Such tilted films would be useful for the study of ab-plane anisotropy of YBa2Cu3O7-delta. (C) 1997 Elsevier Science B.V. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/42052]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yang, Y,Gao, J,Chui, TC,et al. Microstructural study of tilted epitaxial thin films of YBa2Cu3O7-delta with a (105) orientation[J]. PHYSICA C,1997,290(1-2):23. |
| APA | Yang, Y,Gao, J,Chui, TC,&Li, L.(1997).Microstructural study of tilted epitaxial thin films of YBa2Cu3O7-delta with a (105) orientation.PHYSICA C,290(1-2),23. |
| MLA | Yang, Y,et al."Microstructural study of tilted epitaxial thin films of YBa2Cu3O7-delta with a (105) orientation".PHYSICA C 290.1-2(1997):23. |
入库方式： OAI收割
来源：物理研究所
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