中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Microstructure investigation on barrier shapes of double barrier magnetic tunnel junctions

文献类型:期刊论文

作者Wang, Y ; Zeng, ZM ; Rehana, S ; Han, XF ; Sun, XC ; Zhang, Z
刊名JOURNAL OF APPLIED PHYSICS
出版日期2006
卷号100期号:5
关键词AXIS ELECTRON HOLOGRAPHY ROOM-TEMPERATURE BIAS VOLTAGE THIN-FILMS MAGNETORESISTANCE DEPENDENCE MICROSCOPY
ISSN号0021-8979
通讯作者Han, XF: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China.
中文摘要Barrier shapes and its detailed microstructures in the double barrier magnetic tunnel junctions were intensively investigated by both high resolution transmission electron microscopy and electron holography. Two broad (> 2 nm) potential wells (i.e., shapes of AlO(x) layers) with slanted interfaces were observed in the electron hologram of the as-deposited samples. However, in the hologram of the annealed samples, two narrowed (down to 1.18 nm) and almost equal (height) potential wells with sharp and steep interfaces were acquired. This indicates that the value of tunnel magnetoresistance can be increased from 12.8% to 29.4% at room temperature by annealing treatment where the sharpness and height of the barriers played a critical role. (c) 2006 American Institute of Physics.
收录类别SCI
语种英语
公开日期2013-09-18
源URL[http://ir.iphy.ac.cn/handle/311004/42109]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Wang, Y,Zeng, ZM,Rehana, S,et al. Microstructure investigation on barrier shapes of double barrier magnetic tunnel junctions[J]. JOURNAL OF APPLIED PHYSICS,2006,100(5).
APA Wang, Y,Zeng, ZM,Rehana, S,Han, XF,Sun, XC,&Zhang, Z.(2006).Microstructure investigation on barrier shapes of double barrier magnetic tunnel junctions.JOURNAL OF APPLIED PHYSICS,100(5).
MLA Wang, Y,et al."Microstructure investigation on barrier shapes of double barrier magnetic tunnel junctions".JOURNAL OF APPLIED PHYSICS 100.5(2006).

入库方式: OAI收割

来源:物理研究所

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