Microstructure of a-SiOx : H
文献类型：期刊论文
| 作者 | Wang, YQ ; Liao, XB ; Diao, HW ; Cheng, WC ; Li, GH ; Chen, CY ; Zhang, SB ; Xu, YY ; Chen, WD ; Kong, GL |
| 刊名 | SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
 |
| 出版日期 | 2002 |
| 卷号 | 45期号:10页码:1320 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION AMORPHOUS-SILICON ELECTRONIC-PROPERTIES SIO2/SI INTERFACE OXYGEN FILMS VIBRATIONS ALLOYS SYSTEM |
| ISSN号 | 1006-9283 |
| 通讯作者 | Wang, YQ: Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, Beijing 100083, Peoples R China. |
| 中文摘要 | A set of a-SiOx:H (0.52 < x < 1.58) films are fabricated by plasma-enhanced-chemical-vapor-deposition (PECVD) method at the substrate temperature of 250degreesC. The microstructure and local bonding configurations of the films are investigated in detail using micro-Raman scattering, X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). It is found that the films are structural inhomogeneous, with five phases of Si, Si2O:H, SiO:H, Si2O3:H and SiO2 that coexist. The phase of Si is composed of nonhydrogenated amorphous silicon (a-Si) clusters that are spatially isolated. The average size of the clusters decreases with the increasing oxygen concentration x in the films. The results indicate that the structure of the present films can be described by a multi-shell model, which suggests that a-Si cluster is surrounded in turn by the subshells Of Si2O:H, SiO:H, Si2O3:H, and SiO2. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/42112]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, YQ,Liao, XB,Diao, HW,et al. Microstructure of a-SiOx : H[J]. SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,2002,45(10):1320. |
| APA | Wang, YQ.,Liao, XB.,Diao, HW.,Cheng, WC.,Li, GH.,...&Kong, GL.(2002).Microstructure of a-SiOx : H.SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,45(10),1320. |
| MLA | Wang, YQ,et al."Microstructure of a-SiOx : H".SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY 45.10(2002):1320. |
入库方式： OAI收割
来源：物理研究所
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