Microstructure of beta-FeSi2 film synthesized by ion implantation
文献类型：期刊论文
| 作者 | Li, XN ; Nie, D ; Dong, CA ; Ma, TC ; Jin, X ; Zhang, Z |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2002 |
| 卷号 | 51期号:1页码:115 |
| 关键词 | TRANSMISSION ELECTRON-MICROSCOPY SOLID-PHASE EPITAXY SEMICONDUCTING FESI2 BEAM SYNTHESIS THIN-FILMS DISILICIDE SI(001) SILICON LAYERS |
| ISSN号 | 1000-3290 |
| 通讯作者 | Li, XN: Dalian Univ Technol, Dept Mat Engn, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China. |
| 中文摘要 | Iron-silicide films have been synthesized by metal vapor vacuum arc (MEVVA) ion implantation of iron into ( 111) and (100) oriented silicon wafers. The structure evolution was characterized using transmission electron microscopy (TEM) and high-resolution electron microscopy (HREM). The beta-FeSi2 films and buried layers with different depth and thickness were obtained by adjusting the implantation energy and dose. The formation of alpha, beta, gamma and CsCl-FeSi2 phases have been observed. The phase transition order is gamma-FeSi2-->beta-FeSi2-->alpha-FeSi2, CsCl-FeSi2-->beta-FeSi2-->alpha-FeSi2 or beta-FeSi2-->alpha-FeSi2. An amorphous layer was formed at 60 kV and 4 x 10(17) ions/cm(2), the phase transition order is amorphous-->beta-FeSi2-->alpha-FeSi2. The morphology and position of the silicide films change with the annealing temperature. The silicide grains grow with increasing annealing temperature with further increase of temperature, the continuous silicide layers shrink into isolated islands and the interface X-FeSi2/Si becomes rougher. In this paper, the complicated orientation relationships existing between beta-FeSi2 and Si were also investigated. |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/42113]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, XN,Nie, D,Dong, CA,et al. Microstructure of beta-FeSi2 film synthesized by ion implantation[J]. ACTA PHYSICA SINICA,2002,51(1):115. |
| APA | Li, XN,Nie, D,Dong, CA,Ma, TC,Jin, X,&Zhang, Z.(2002).Microstructure of beta-FeSi2 film synthesized by ion implantation.ACTA PHYSICA SINICA,51(1),115. |
| MLA | Li, XN,et al."Microstructure of beta-FeSi2 film synthesized by ion implantation".ACTA PHYSICA SINICA 51.1(2002):115. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。