Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Hu, GQ ; Kong, X ; Wan, L ; Wang, YQ ; Duan, XF ; Lu, Y ; Liu, XL |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2003 |
| 卷号 | 256期号:3-4页码:416 |
| 关键词 | MOLECULAR-BEAM EPITAXY HIGH-QUALITY GAN HETEROEPITAXIAL GROWTH ELECTRON-DIFFRACTION DEFECT STRUCTURE HETEROSTRUCTURE DISLOCATIONS MICROSCOPY (111)SI LAYER |
| ISSN号 | 0022-0248 |
| 通讯作者 | Hu, GQ: Chinese Acad Sci, Inst Phys, Beijing Lab Electron Microscopy, POB 2724, Beijing 100080, Peoples R China. |
| 中文摘要 | We report the transmission electron microscopy (TEM) study of the microstructure of wurtzitic GaN films grown on Si(I I I) substrates with AlN buffer layers by metalorganic chemical vapor deposition (MOCVD) method. An amorphous layer was formed at the interface between Si and AlN when thick GaN film was grown. We propose the amorphous layer was induced by the large stress at the interface when thick GaN was grown. The In0.1Ga0.9N/GaN multiple quantum well (MQW) reduced the dislocation density by obstructing the mixed and screw dislocations from passing through the MQW. But no evident reduction of the edge dislocations by the MQW was observed. It was found that dislocations located at the boundaries of grains slightly in-plane misoriented have screw component. Inversion domain is also observed. (C) 2003 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/42117]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Hu, GQ,Kong, X,Wan, L,et al. Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition[J]. JOURNAL OF CRYSTAL GROWTH,2003,256(3-4):416. |
| APA | Hu, GQ.,Kong, X.,Wan, L.,Wang, YQ.,Duan, XF.,...&Liu, XL.(2003).Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition.JOURNAL OF CRYSTAL GROWTH,256(3-4),416. |
| MLA | Hu, GQ,et al."Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition".JOURNAL OF CRYSTAL GROWTH 256.3-4(2003):416. |
入库方式： OAI收割
来源：物理研究所
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