Microstructure, magnetic, and spin-dependent transport properties of (Zn,Cr)Te films fabricated by magnetron sputtering
文献类型：期刊论文
| 作者 | Wang, WG ; Yee, KJ ; Kim, DH ; Han, KJ ; Wang, XR ; Ni, C ; Moriyama, T ; Mathew, A ; Opila, R ; Zhu, T ; Xiao, JQ |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2008 |
| 卷号 | 77期号:15 |
| ISSN号 | 1098-0121 |
| 中文摘要 | Chromium doped zinc telluride thin films with various doping concentrations are fabricated by magnetron sputtering. These films are ferromagnetic and the Curie temperature increases with Cr concentration. X-ray diffraction, transmission electron microscopy, and magnetic circular dichroism characterizations show that the films are free of Cr1-xTex impurities and the ferromagnetism is intrinsic. The transport study shows that the resistivity and magnetoresistance are governed by variable range hopping at low temperatures. A negative magnetoresistance as large as -57% is observed at 5 K. The magnetoresistance and its temperature dependence can be well explained by a model involving an increase in the localization length of carriers with a magnetic field in the hopping region. An anomalous Hall effect is also observed and a possible origin of the sign difference between the anomalous Hall resistance and ordinary Hall resistance is discussed. |
| 收录类别 | SCI |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/42138]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, WG,Yee, KJ,Kim, DH,et al. Microstructure, magnetic, and spin-dependent transport properties of (Zn,Cr)Te films fabricated by magnetron sputtering[J]. PHYSICAL REVIEW B,2008,77(15). |
| APA | Wang, WG.,Yee, KJ.,Kim, DH.,Han, KJ.,Wang, XR.,...&Xiao, JQ.(2008).Microstructure, magnetic, and spin-dependent transport properties of (Zn,Cr)Te films fabricated by magnetron sputtering.PHYSICAL REVIEW B,77(15). |
| MLA | Wang, WG,et al."Microstructure, magnetic, and spin-dependent transport properties of (Zn,Cr)Te films fabricated by magnetron sputtering".PHYSICAL REVIEW B 77.15(2008). |
入库方式： OAI收割
来源：物理研究所
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