Microstructures of GaN films grown by low pressure metalorganic vapor phase epitaxy on (01(1)over-bar2) sapphire substrates
文献类型：期刊论文
| 作者 | Cheng, LS ; Zhang, Z ; Zhang, GY ; Yang, ZJ |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 1998 |
| 卷号 | 191期号:4页码:641 |
| 关键词 | AIN BUFFER LAYER |
| ISSN号 | 0022-0248 |
| 通讯作者 | Cheng, LS: Chinese Acad Sci, Beijing Lab Electron Microscopy, Dept Condensed Matter Phys, POB 2724, Beijing 100080, Peoples R China. |
| 中文摘要 | Microstructures of GaN films grown by low pressure metalorganic vapor-phase epitaxy on (0 1 (1) over bar 2) sapphire substrates were investigated using transmission electron microscopy. The crystallographic structure of the GaN buffer layer grown at 550 degrees C was uniquely hexagonal. Grain boundaries and stacking faults in the as-grown buffer layer are much less than those in the buffer layer grown on (0 0 0 1) sapphire substrates. Defects in the as-grown epitaxial layers are predominantly edge type dislocations with Burgers vector b = 1/3 [1 (1) over bar 0 0]. No screw dislocations or domain boundaries in the epilayer were observed in the as-grown samples. (C) 1998 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/42148]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cheng, LS,Zhang, Z,Zhang, GY,et al. Microstructures of GaN films grown by low pressure metalorganic vapor phase epitaxy on (01(1)over-bar2) sapphire substrates[J]. JOURNAL OF CRYSTAL GROWTH,1998,191(4):641. |
| APA | Cheng, LS,Zhang, Z,Zhang, GY,&Yang, ZJ.(1998).Microstructures of GaN films grown by low pressure metalorganic vapor phase epitaxy on (01(1)over-bar2) sapphire substrates.JOURNAL OF CRYSTAL GROWTH,191(4),641. |
| MLA | Cheng, LS,et al."Microstructures of GaN films grown by low pressure metalorganic vapor phase epitaxy on (01(1)over-bar2) sapphire substrates".JOURNAL OF CRYSTAL GROWTH 191.4(1998):641. |
入库方式： OAI收割
来源：物理研究所
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