Mismatch and chemical composition analysis of vertical InxGa1-xAs quantum-dot arrays by transmission electron microscopy
文献类型：期刊论文
| 作者 | Zhang, Q ; Zhu, J ; Ren, XW ; Li, HW ; Wang, TH |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2001 |
| 卷号 | 78期号:24页码:3830 |
| 关键词 | SCANNING-TUNNELING-MICROSCOPY SELF-ORGANIZATION SUPERLATTICES ISLANDS GROWTH GAAS INGAAS |
| ISSN号 | 0003-6951 |
| 通讯作者 | Zhu, J: Tsing Hua Univ, Sch Mat Sci & Engn, Electron Microscopy Lab, Beijing 100084, Peoples R China. |
| 中文摘要 | Vertically stacked InxGa1-xAs/GaAs quantum dots have been fabricated by molecular beam epitaxy. Cross-sectional high resolution electron microscopy analyses demonstrate that the quantum dot size increases, and the interplanar spacings of {111} for quantum dots as well as the mismatch between the quantum dots and the spacer layers, is increased with the layer number, Chemical analysis shows that, as fabrication proceeds, indium content is increased and gallium content is decreased, leading to the changes of mismatch and interplanar spacing for the quantum dots. (C) 2001 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/42173]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, Q,Zhu, J,Ren, XW,et al. Mismatch and chemical composition analysis of vertical InxGa1-xAs quantum-dot arrays by transmission electron microscopy[J]. APPLIED PHYSICS LETTERS,2001,78(24):3830. |
| APA | Zhang, Q,Zhu, J,Ren, XW,Li, HW,&Wang, TH.(2001).Mismatch and chemical composition analysis of vertical InxGa1-xAs quantum-dot arrays by transmission electron microscopy.APPLIED PHYSICS LETTERS,78(24),3830. |
| MLA | Zhang, Q,et al."Mismatch and chemical composition analysis of vertical InxGa1-xAs quantum-dot arrays by transmission electron microscopy".APPLIED PHYSICS LETTERS 78.24(2001):3830. |
入库方式： OAI收割
来源：物理研究所
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