Modifying Quantum Well States of Pb Thin Films via Interface Engineering
文献类型：期刊论文
| 作者 | Fu, YS ; Ji, SH ; Zhang, T ; Chen, X ; Jia, JF ; Xue, QK ; Ma, XC |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2010 |
| 卷号 | 27期号:6 |
| ISSN号 | 0256-307X |
| 通讯作者 | Fu, YS: Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | We demonstrate the importance of interface modification on improving electron confinement by preparing Pb quantum islands on Si(111) substrates with two different surface reconstructions, i.e., Si(111)- 7 x 7 and Si(111)-Root3xRoot3-Pb (hereafter, 7 x 7 and R3). Characterization with scanning tunneling microscopy/spectroscopy shows that growing Pb films directly on a 7 x 7 surface will generate many interface defects, which makes the lifetime of quantum well states (QWSs) strongly dependent on surface locations. On the other hand, QWSs in Pb films on an R3 surface are well defined with small variations in linewidth on different surface locations and are much sharper than those on the 7 x 7 surface. We show that the enhancement in quantum confinement is primarily due to the reduced electron-defect scattering at the interface. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [20733008, 10721404, 10974111] |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/42228]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Fu, YS,Ji, SH,Zhang, T,et al. Modifying Quantum Well States of Pb Thin Films via Interface Engineering[J]. CHINESE PHYSICS LETTERS,2010,27(6). |
| APA | Fu, YS.,Ji, SH.,Zhang, T.,Chen, X.,Jia, JF.,...&Ma, XC.(2010).Modifying Quantum Well States of Pb Thin Films via Interface Engineering.CHINESE PHYSICS LETTERS,27(6). |
| MLA | Fu, YS,et al."Modifying Quantum Well States of Pb Thin Films via Interface Engineering".CHINESE PHYSICS LETTERS 27.6(2010). |
入库方式： OAI收割
来源：物理研究所
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