MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI/GESI RIDGE STRUCTURE
文献类型：期刊论文
| 作者 | GUO, LW ; CHEN, H ; ZHOU, JM ; HUANG, Q |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 1995 |
| 卷号 | 153期号:3-4页码:110 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION HIGH-ELECTRON-MOBILITY OPTICAL-PROPERTIES 2-DIMENSIONAL ELECTRON QUANTUM WELLS FABRICATION WIRES GAAS HETEROSTRUCTURES SUPERLATTICES |
| ISSN号 | 0022-0248 |
| 通讯作者 | GUO, LW: CHINESE ACAD SCI,INST PHYS,POB 603,BEIJING 100080,PEOPLES R CHINA. |
| 中文摘要 | In this article, we review our recent studies on new rare-earth intermetallic compounds including the Ga, Si substituted 2:17-type compounds, their nitrides, carbides, and the Sm-3 (Fe,Ti)(29)N-5 compounds, Much of our recent work is focused on the Sm-2(Fe,Ga)(17)C-x alloys where we used melt spinning and subsequent annealing to obtain high coercivity, The highest coercivity obtained so far was in Sm2Fe14Ga3C2.5 with a value of 12.8 kOe at room temperature, The off-stoichiometric Sm2Fe14-xCoxSi2Ny nitrides maintain the Th2Zn17-type structure but with a unit-cell expansion Delta VV up to 5% compared to the host materials, The Sm2Fe14-xCoxSi2Cz, carbides maintain the Th2Zn17-type structure when z=1 and transform to the BaCd11-type structure when z = 2, A very large anisotropy field with an applied magnetic field (Ha) value of 227 kOe for Sm2Fe14Si2N2.6 and 276 kOe for Sm2Fe10Co4Si2N2.3 is observed at low temperature (1.5 K). The Sm-3(Fe,Ti)(29)N-5 compound and its nitrides show very interesting magnetic properties, Both of these compounds exhibit ferromagnetic ordering with Curie temperature (T-c) of 486 and 750 K, respectively, The room temperature saturation magnetization is 119 emu/g for the parent compounds and 145 emu/g for the nitrides, The easy magnetization direction changes from planar to uniaxial upon nitrogenation, The anisotropy field for the nitrides is 12 T at room temperature and 25 T at 4.2 K. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/42265]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | GUO, LW,CHEN, H,ZHOU, JM,et al. MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI/GESI RIDGE STRUCTURE[J]. JOURNAL OF CRYSTAL GROWTH,1995,153(3-4):110. |
| APA | GUO, LW,CHEN, H,ZHOU, JM,&HUANG, Q.(1995).MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI/GESI RIDGE STRUCTURE.JOURNAL OF CRYSTAL GROWTH,153(3-4),110. |
| MLA | GUO, LW,et al."MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI/GESI RIDGE STRUCTURE".JOURNAL OF CRYSTAL GROWTH 153.3-4(1995):110. |
入库方式： OAI收割
来源：物理研究所
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