中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Molecular-dynamics simulation of Al/SiC interface structures

文献类型:期刊论文

作者Luo, X ; Qian, GF ; Wang, EG ; Chen, CF
刊名PHYSICAL REVIEW B
出版日期1999
卷号59期号:15页码:10125
关键词AMORPHOUS INTERGRANULAR FILMS METAL-MATRIX COMPOSITES BETA-SIC WHISKERS SILICON-CARBIDE ALUMINUM COMPOSITES SURFACES MICROSTRUCTURE SEMICONDUCTORS POTENTIALS STABILITY
ISSN号0163-1829
通讯作者Luo, X: Chinese Acad Sci, State Key Lab Surface Phys, Beijing 100080, Peoples R China.
中文摘要Molecular-dynamics simulation employing Tersoff and Ito-Kohr-Das Sarma potentials has been performed to study structural properties of Al/SiC interfaces. The atomic configuration and cohesive energy of various Al/SiC interfaces formed between low-index planes of Al and SiC surfaces have been calculated. A positive correlation between the existence of a specific orientation relationship (OR) and its cohesive energy has been identified and used as a guide in search of more Al/SiC OR's. Structural disorder is induced by the interfacial bonding dominated by the Al-C interaction, but is limited to a narrow region near the interface, thus maintaining definite OR's between Al and SiC. It is shown that the cohesive energy decreases only slightly when the OR's deviate from the ideal arrangement within a small range,,suggesting the stability of these nonideal OR's. The calculated results are in good agreement with experiment and provide an atomic-level description for the low-index Al/SiC interfaces. [S0163-1829(99)10115-2].
收录类别SCI
语种英语
公开日期2013-09-18
源URL[http://ir.iphy.ac.cn/handle/311004/42267]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Luo, X,Qian, GF,Wang, EG,et al. Molecular-dynamics simulation of Al/SiC interface structures[J]. PHYSICAL REVIEW B,1999,59(15):10125.
APA Luo, X,Qian, GF,Wang, EG,&Chen, CF.(1999).Molecular-dynamics simulation of Al/SiC interface structures.PHYSICAL REVIEW B,59(15),10125.
MLA Luo, X,et al."Molecular-dynamics simulation of Al/SiC interface structures".PHYSICAL REVIEW B 59.15(1999):10125.

入库方式: OAI收割

来源:物理研究所

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