Morphology and photoluminescence of GeSi self-assembled quantum dot on Si(113)
文献类型：期刊论文
| 作者 | Si, JJ ; Yang, QQ ; Teng, D ; Wang, HJ ; Yu, JZ ; Wang, QM ; Guo, LW ; Zhou, JM |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 1999 |
| 卷号 | 48期号:9页码:1745 |
| 关键词 | SCANNING-TUNNELING-MICROSCOPY ROOM-TEMPERATURE GAAS-SURFACES HIGH-INDEX GROWTH INGAAS SUPERLATTICES SI(100) EPITAXY |
| ISSN号 | 1000-3290 |
| 通讯作者 | Si, JJ: Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. |
| 中文摘要 | Morphology of self-assembled GeSi quantum dot grown on Si(113) by Si molecular beam epitaxy has been studied by transmission electron microscopy and atomic force microscopy. Photoluminescence from the as-grown sample and annealed sample was studied. The results were analyzed and explained. |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/42325]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Si, JJ,Yang, QQ,Teng, D,et al. Morphology and photoluminescence of GeSi self-assembled quantum dot on Si(113)[J]. ACTA PHYSICA SINICA,1999,48(9):1745. |
| APA | Si, JJ.,Yang, QQ.,Teng, D.,Wang, HJ.,Yu, JZ.,...&Zhou, JM.(1999).Morphology and photoluminescence of GeSi self-assembled quantum dot on Si(113).ACTA PHYSICA SINICA,48(9),1745. |
| MLA | Si, JJ,et al."Morphology and photoluminescence of GeSi self-assembled quantum dot on Si(113)".ACTA PHYSICA SINICA 48.9(1999):1745. |
入库方式： OAI收割
来源：物理研究所
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