Multilevel Resistive Switching in Planar Graphene/SiO2 Nanogap Structures
文献类型：期刊论文
| 作者 | He, CL ; Shi, ZW ; Zhang, LC ; Yang, W ; Yang, R ; Shi, DX ; Zhang, GY |
| 刊名 | ACS NANO
 |
| 出版日期 | 2012 |
| 卷号 | 6期号:5页码:4214 |
| 关键词 | LEAKAGE CURRENT THIN OXIDE MEMORIES SIO2 ELECTROLUMINESCENCE ELECTRODES DEVICES FILMS |
| ISSN号 | 1936-0851 |
| 通讯作者 | Zhang, GY: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | We report a planar graphene/SiO2 nanogap structure for multilevel resistive switching. Nanosized gaps created on a SiO2 substrate by electrical breakdown of nanographene electrodes were used as channels for resistive switching. Two-terminal devices exhibited excellent memory characteristics with good endurance up to 10(4) cycles, long retention time more than 10(5) s, and fast switching speed down to 500 ns. At least five conduction states with reliability and reproducibility were demonstrated in these memory devices. The mechanism of the resistance switching effect was attributed to a reversible thermal-assisted reduction and oxidation process that occurred at the breakdown region of the SiO2 substrate. In addition, the uniform and wafer-size nanographene films with controlled layer thickness and electrical resistivity were grown directly on SiO2 substrates for scalable device fabrications, making it attractive for developing high-density and low-cost nonvolatile memories. |
| 收录类别 | SCI |
| 资助信息 | Chinese Academy of Sciences (CAS); National Science Foundation of China (NSFC) [11174333, 11074288, 10974226]; Chinese Ministry of Science and Technology [2010CB934202, 2012CB921302] |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/42389]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | He, CL,Shi, ZW,Zhang, LC,et al. Multilevel Resistive Switching in Planar Graphene/SiO2 Nanogap Structures[J]. ACS NANO,2012,6(5):4214. |
| APA | He, CL.,Shi, ZW.,Zhang, LC.,Yang, W.,Yang, R.,...&Zhang, GY.(2012).Multilevel Resistive Switching in Planar Graphene/SiO2 Nanogap Structures.ACS NANO,6(5),4214. |
| MLA | He, CL,et al."Multilevel Resistive Switching in Planar Graphene/SiO2 Nanogap Structures".ACS NANO 6.5(2012):4214. |
入库方式： OAI收割
来源：物理研究所
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