Multipeak negative-differential-resistance device by combining SET and MOSFET
文献类型：期刊论文
| 作者 | Zhang, ZY ; Wang, TH |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2003 |
| 卷号 | 52期号:7页码:1766 |
| 关键词 | RESONANT-TUNNELING DIODES SINGLE-ELECTRON TRANSISTORS |
| ISSN号 | 1000-3290 |
| 通讯作者 | Zhang, ZY: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | A multipeak negative-differential-resistance(NDR) device which comprises a single-electron transistor (SET) and a metaloxide-semiconductor field-effect-transistor (MOSFET) can achieve infinite number of peaks in,principle. The MOS device eliminates the large SD voltage dependence of the peak and volley currents of the SET. The multipeak NDR device can be widely used in multiple-valued logics, and analog-to-digital converters (ADCs). We obtain a multiple-valued memory unit through the multipeak NDR device. And by using the folding I-V characteristic, a four-bit ADC is achieved. Compared with the traditional flash ADC, the SET-MOSFET ADC is very simple. |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/42396]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, ZY,Wang, TH. Multipeak negative-differential-resistance device by combining SET and MOSFET[J]. ACTA PHYSICA SINICA,2003,52(7):1766. |
| APA | Zhang, ZY,&Wang, TH.(2003).Multipeak negative-differential-resistance device by combining SET and MOSFET.ACTA PHYSICA SINICA,52(7),1766. |
| MLA | Zhang, ZY,et al."Multipeak negative-differential-resistance device by combining SET and MOSFET".ACTA PHYSICA SINICA 52.7(2003):1766. |
入库方式： OAI收割
来源：物理研究所
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