TEM OBSERVATION OF GAAS ON SI(100) GROWN BY MBE
文献类型：期刊论文
| 作者 | ZHOU, JM ; CHEN, H ; LI, FH ; LIU, S ; MEI, XB ; HUANG, Y |
| 刊名 | VACUUM
 |
| 出版日期 | 1992 |
| 卷号 | 43期号:11页码:1055 |
| 关键词 | GALLIUM-ARSENIDE SILICON |
| ISSN号 | 0042-207X |
| 通讯作者 | ZHOU, JM (reprint author), CHINESE ACAD SCI,INST PHYS,POB 603,BEIJING 100080,PEOPLES R CHINA. |
| 中文摘要 | The formation of microtwins and the interaction between the microtwins and superlattices in MBE grown GaAs layers on Si have been investigated by TEM. The higher steps and the deeper hollows cause the formation of the microtwins. Microtwin interaction could reduce the density of the twins. The superlattices could be bent by microtwins and restrict the microtwins, and new microtwins could occur in superlattices as well. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/44735]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | ZHOU, JM,CHEN, H,LI, FH,et al. TEM OBSERVATION OF GAAS ON SI(100) GROWN BY MBE[J]. VACUUM,1992,43(11):1055. |
| APA | ZHOU, JM,CHEN, H,LI, FH,LIU, S,MEI, XB,&HUANG, Y.(1992).TEM OBSERVATION OF GAAS ON SI(100) GROWN BY MBE.VACUUM,43(11),1055. |
| MLA | ZHOU, JM,et al."TEM OBSERVATION OF GAAS ON SI(100) GROWN BY MBE".VACUUM 43.11(1992):1055. |
入库方式： OAI收割
来源：物理研究所
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