Terminating atomic plane and growth mechanism study of perovskite oxide thin films by angle-resolved X-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Cui, DF ; Guo, XX ; Chen, ZH ; Zhou, YL ; Yang, GZ ; Huang, HZ ; Zhang, H ; Lui, FQ ; Ibrahim, K ; Qian, HJ |
| 刊名 | ASIAN JOURNAL OF SPECTROSCOPY
 |
| 出版日期 | 2002 |
| 卷号 | 6期号:1页码:17 |
| 关键词 | MOLECULAR-BEAM EPITAXY FIELD-EFFECT TRANSISTOR BARIUM-TITANATE HETEROSTRUCTURES DEPOSITION SUBSTRATE LAYER MGO |
| ISSN号 | 0971-9237 |
| 通讯作者 | Cui, DF (reprint author), Chinese Acad Sci, Lab Opt Phys, Inst Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | We report a study of terminating atomic plane and growth mechanism for the perovskite oxide thin films. The ferroelectric BaTiO3 (001) and the colossal magnetoresistance (CMR) La0 9Sn0 1MnO3 thin films were grown epitaxially on SrTiO3(001) substrate and LaAlO3(001) substrate by pulsed laser deposition (PLD), respectively. The crystalline structure and the orientation of these oxide thin films were determined by X-ray diffraction. The topmost surface for the both of BaTiO3 and La-0 Sn-9(0) 1MnO3 thin films were analyzed by angle-resolved X - ray photoelectron spectroscopy (ARXPS), indicating that the BaTiO3 film is predominantly terminated with TiO2 atomic plane and the growth sequence of the atomic layers is TiO2 (substrate) // BaO / TiO2 / ...... / BaO / TiO2; the La0 9Sn0 1MnO3 film is predominantly terminated with MnO2 atomic plane and the growth sequence of the layers is AlO2 (substrate) // La(Sn)O / MnO2 / ...... / La(Sn)O MnO2. The evaluation for the LaNiO3 thin film grown on the SrTiO3 (001) substrate is also provided. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/44854]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cui, DF,Guo, XX,Chen, ZH,et al. Terminating atomic plane and growth mechanism study of perovskite oxide thin films by angle-resolved X-ray photoelectron spectroscopy[J]. ASIAN JOURNAL OF SPECTROSCOPY,2002,6(1):17. |
| APA | Cui, DF.,Guo, XX.,Chen, ZH.,Zhou, YL.,Yang, GZ.,...&Qian, HJ.(2002).Terminating atomic plane and growth mechanism study of perovskite oxide thin films by angle-resolved X-ray photoelectron spectroscopy.ASIAN JOURNAL OF SPECTROSCOPY,6(1),17. |
| MLA | Cui, DF,et al."Terminating atomic plane and growth mechanism study of perovskite oxide thin films by angle-resolved X-ray photoelectron spectroscopy".ASIAN JOURNAL OF SPECTROSCOPY 6.1(2002):17. |
入库方式： OAI收割
来源：物理研究所
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