中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Ternary Cu3NPdx exhibiting invariant electrical resistivity over 200 K

文献类型:期刊论文

作者Ji, AL ; Li, CR ; Cao, Z
刊名APPLIED PHYSICS LETTERS
出版日期2006
卷号89期号:25
关键词COPPER NITRIDE THIN-FILMS
ISSN号0003-6951
通讯作者Cao, Z (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要Electrical resistivity is a physical property of enormous importance, but it is usually a complicated function of temperature. Here the authors report a vanishing temperature coefficient of electrical resistance (< 3.0x10(-6)/K) in the temperature range from 240 to 5 K measured in Cu3NPd0.238, following the semiconducting-to-semimetallic transition in Cu3NPdx with x increasing from zero. It results from a delicate balance between the opposite changes of the number of carriers and the carrier mobility with temperature, which is possible only in a semimetal. This finding will inspire the search for similar materials and promote an in-depth investigation of the detailed operating mechanism. (c) 2006 American Institute of Physics.
收录类别SCI
语种英语
公开日期2013-09-23
源URL[http://ir.iphy.ac.cn/handle/311004/44856]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Ji, AL,Li, CR,Cao, Z. Ternary Cu3NPdx exhibiting invariant electrical resistivity over 200 K[J]. APPLIED PHYSICS LETTERS,2006,89(25).
APA Ji, AL,Li, CR,&Cao, Z.(2006).Ternary Cu3NPdx exhibiting invariant electrical resistivity over 200 K.APPLIED PHYSICS LETTERS,89(25).
MLA Ji, AL,et al."Ternary Cu3NPdx exhibiting invariant electrical resistivity over 200 K".APPLIED PHYSICS LETTERS 89.25(2006).

入库方式: OAI收割

来源:物理研究所

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