The correlation between emission in freshly prepared porous silicon and the carrier density in silicon wafer
文献类型：期刊论文
| 作者 | Zou, BS ; Wang, JP ; El-Sayed, MA |
| 刊名 | ASIAN JOURNAL OF SPECTROSCOPY
 |
| 出版日期 | 2002 |
| 卷号 | 6期号:1页码:9 |
| 关键词 | HYDROGENATED AMORPHOUS-SILICON QUANTUM DOTS LUMINESCENCE PHOTOLUMINESCENCE NANOCRYSTALS OXYGEN TEMPERATURE MECHANISM SURFACE STATES |
| ISSN号 | 0971-9237 |
| 通讯作者 | Zou, BS (reprint author), Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | The emission, and Fourier transform infrared spectra of freshly prepared porous silicon (PS) and the silicon wafer are examined. Increasing the temperatures leads to a general decrease in the emission intensities of PS samples, however, the emission of freshly prepared samples show an unusually large and sudden increase in its intensity at the specific temperature at which the hydrogen ion conductivity in the silicon wafer increases. The temperature dependence of the O-H vibration intensity of silicon wafer shows a sudden decrease at the same temperature. These results are consistent with a model in which the luminescence in PS may come from the carrier-bound exciton in the confined nanostructure. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/44950]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zou, BS,Wang, JP,El-Sayed, MA. The correlation between emission in freshly prepared porous silicon and the carrier density in silicon wafer[J]. ASIAN JOURNAL OF SPECTROSCOPY,2002,6(1):9. |
| APA | Zou, BS,Wang, JP,&El-Sayed, MA.(2002).The correlation between emission in freshly prepared porous silicon and the carrier density in silicon wafer.ASIAN JOURNAL OF SPECTROSCOPY,6(1),9. |
| MLA | Zou, BS,et al."The correlation between emission in freshly prepared porous silicon and the carrier density in silicon wafer".ASIAN JOURNAL OF SPECTROSCOPY 6.1(2002):9. |
入库方式： OAI收割
来源：物理研究所
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