The crystal structural evolution of nano-Si anode caused by lithium insertion and extraction at room temperature
文献类型:期刊论文
作者 | Li, H ; Huang, XJ ; Chen, LQ ; Zhou, GW ; Zhang, Z ; Yu, DP ; Mo, YJ ; Pei, N |
刊名 | SOLID STATE IONICS
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出版日期 | 2000 |
卷号 | 135期号:1-4页码:181 |
关键词 | ION-IMPLANTED SI AMORPHIZATION PROCESSES RECHARGEABLE BATTERIES LASER-ABLATION SILICON NANOWIRES ELECTRODES LI |
ISSN号 | 0167-2738 |
通讯作者 | Chen, LQ (reprint author), Chinese Acad Sci, Inst Phys, Lab Solid State Ion, POB 603, Beijing 100080, Peoples R China. |
中文摘要 | The crystal structure and morphology of nanosized Si particles and wires after Li-insertion/extraction electrochemically have been studied by ex-situ XRD, Raman spectroscopy and electronic microscopy. It is confirmed that the insertion of lithium ions at room temperature destroys the crystal structure of Si gradually and leads to the formation of metastable amorphous Li-Si alloy, Furthermore, local ordered structure of Si can be restored after the partial extraction of lithium ions, which indicates the extraction of lithium ions promoting the recrystallization of amorphous Li-inserted Si. It was also observed that nanosized Si particles and wires were merged together after the insertion/extraction of lithium ions. (C) 2000 Elsevier Science B.V. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-23 |
源URL | [http://ir.iphy.ac.cn/handle/311004/44960] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Li, H,Huang, XJ,Chen, LQ,et al. The crystal structural evolution of nano-Si anode caused by lithium insertion and extraction at room temperature[J]. SOLID STATE IONICS,2000,135(1-4):181. |
APA | Li, H.,Huang, XJ.,Chen, LQ.,Zhou, GW.,Zhang, Z.,...&Pei, N.(2000).The crystal structural evolution of nano-Si anode caused by lithium insertion and extraction at room temperature.SOLID STATE IONICS,135(1-4),181. |
MLA | Li, H,et al."The crystal structural evolution of nano-Si anode caused by lithium insertion and extraction at room temperature".SOLID STATE IONICS 135.1-4(2000):181. |
入库方式: OAI收割
来源:物理研究所
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